Strained Semiconductor Optoelectronic Device with Separate Biasing Arms
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Solution Overview
Problem
Existing optoelectronic devices with strained semiconductor layers have optical and electronic properties that are heavily dependent on the fabrication process, leading to non-uniform electrical bias and reduced performance.
Innovation Solution
An optoelectronic device with a semiconductor layer featuring an elongate central segment under tensile strain, supported by tensioning arms and electrically biased via separate biasing arms that apply a substantially uniform electrical bias along a transverse axis, reducing dependence on fabrication process and enhancing optical and electronic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the central segment is electrically biased through tensioning arms, then electrical contact is achieved, but non-uniform electrical bias and reduced performance occur
Solution Approach 1:
The device separates the tensioning function and electrical biasing function into distinct structural components. The tensioning arms provide mechanical support and strain, while separate biasing arms provide electrical contact, eliminating the conflict that caused non-uniform bias when using tensioning arms for both purposes
Solution Approach 2:
Separate biasing arms are introduced as intermediary elements that provide electrical contact without compromising the mechanical tensioning function. These biasing arms act as mediators that deliver electrical bias uniformly to the active region while allowing the tensioning arms to maintain their structural role
2Reliability
If fabrication processes are used to create strained semiconductor layers, then light emission is achieved, but optical and electronic properties become heavily dependent on fabrication variations
Solution Approach 1:
The patent employs controlled tensile strain as a key parameter to transform the semiconductor band structure from indirect to direct, enabling efficient light emission. By precisely controlling the strain parameter through the tensioning arm geometry and material selection, consistent optical properties are achieved regardless of fabrication variations
Solution Approach 2:
The device uses composite structures combining different semiconductor materials with specific lattice constants to achieve the desired tensile strain. The combination of strained semiconductor layers with appropriate substrate and tensioning arm materials creates a composite system that maintains consistent optical properties across fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved optical and electronic properties by ensuring uniform electrical bias and reduced impact from fabrication processes, increasing internal quantum efficiency and maximizing emitted optical power or light detection area.
Implementation Method 1
certain light sources the optical gain medium of which has, unstrained, an indirect electronic band structure, the band structure then being made direct by applying a sufficient tensile strain
Implementation Method 2
an optoelectronic device for emitting or detecting light radiation... comprising a central segment, which... comprises an active region for emitting or detecting light radiation
Data Source
AI summary
An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A1. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis A2 orthogonal to the axis A1.