Strained Silicon Superlattice With Alternating Strain Sections
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Solution Overview
Problem
Current semiconductor manufacturing techniques for quantum well-based devices face challenges in optimizing carrier mobility through strain engineering, particularly in achieving alternating strains and chemical compositions in superlattice structures for enhanced performance in applications like optics and quantum computing.
Innovation Solution
A semiconductor structure and method involving a semiconductor layer with alternating sections of different strains and chemical compositions, epitaxially grown on a pillar layer with anchor structures, allowing for the creation of a strained superlattice with varying tensile, compressive, and neutral strains, and alternating Si and SiGe compositions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a heterogeneous superlattice structure is formed using two or more different materials with different material properties, then carrier mobility is enhanced through strain engineering, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent segments the superlattice structure into multiple sections along the growth direction, where each section has a specific strain type (tensile, compressive, or neutral). This segmentation allows independent control of strain in different regions while maintaining a uniform chemical composition throughout the layer, thereby enhancing carrier mobility through strain engineering without requiring multiple different materials.
Solution Approach 2:
The patent applies local quality by creating regions with different strain characteristics (tensile, compressive, neutral) within the same semiconductor layer. Each section is engineered to have specific strain properties tailored to desired device performance, while the overall layer maintains uniform chemical composition, simplifying manufacturing compared to heterogeneous material approaches.
2Reliability
If alternating strain sections are created in the semiconductor layer, then device performance is improved for applications like optics and quantum computing, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary action by forming a pillar layer with alternating strain sections before epitaxially growing the semiconductor layer. The pillar layer serves as a pre-engineered template that defines the strain distribution pattern, allowing the subsequent semiconductor layer to inherit this pattern through conformal growth, thereby achieving complex strain profiles with simplified process control.
Solution Approach 2:
The patent introduces an intermediary pillar layer that acts as a mediator between the substrate and the final semiconductor device. This pillar layer with alternating strain sections serves as a temporary structure that enables precise strain engineering in the semiconductor layer while simplifying the overall manufacturing process and reducing direct precision requirements.
3Manufacturing precision
If a pillar layer with alternating chemical compositions is used as a template, then strain control is improved, but the number of manufacturing steps increases
Solution Approach 1:
The patent applies discarding and recovering by using the pillar layer with alternating chemical compositions as a temporary template structure that is eventually removed after serving its purpose. The pillar layer enables precise strain control during the epitaxial growth process, and after the semiconductor layer is formed with the desired strain profile, the pillar layer is discarded through selective removal, having fulfilled its intermediary function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances carrier mobility and device performance by creating a strained superlattice with controlled strain variations, improving the semiconductor structure's efficiency and adaptability for advanced applications such as quantum computing and optics.
Implementation Method 1
epitaxially growing a semiconductor layer on a sidewall surface of the pillar layer
Data Source
AI summary
Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a plurality of sections from a top to a bottom thereof, wherein the plurality of sections has a same chemical composition and at least two different strains. For example, in one embodiment, the plurality of sections has a same chemical composition of epitaxially grown silicon (Si) and has alternating strains between a tensile strain and a compressive strain. A method of manufacturing the semiconductor structure is also provided.