3D Memory Device Strained Silicon Channels and NiAlSi Drain Contacts
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Solution Overview
Problem
Current three-dimensional memory devices face challenges in achieving high mobility and low resistance contacts, particularly in strained silicon and silicon germanium semiconductor channels and nickel aluminum silicide/germanide drain contacts, which affect electron mobility and contact resistance.
Innovation Solution
The implementation of strained single-crystalline silicon layers on silicon germanium horizontal channels and the use of nickel aluminum silicide/germanide drain contacts to reduce metal-semiconductor contact resistance, enhancing electron mobility and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor channels and metal-semiconductor contacts are used in three-dimensional memory devices, then device structure is simpler, but electron mobility is lower and contact resistance is higher
Solution Approach 1:
The patent applies parameter changes by introducing strain into the semiconductor channel through lattice mismatch with the substrate, and by changing the material composition of the contact layer to form nickel aluminum silicide or germanide alloys. These parameter changes directly improve electron mobility and reduce contact resistance without fundamentally altering the device architecture
Solution Approach 2:
The patent uses composite materials by forming nickel aluminum silicide or germanide drain contacts through reaction between nickel aluminum alloy and silicon or silicon germanium semiconductor materials. This composite approach creates materials with optimized electrical properties that reduce contact resistance while maintaining structural integrity
2Reliability
If nickel aluminum silicide or germanide drain contacts are formed, then contact resistance decreases, but manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by depositing the nickel aluminum alloy layer before the semiconductor channel formation is complete. This allows the alloy to react with the silicon or silicon germanium during subsequent processing steps, forming the low-resistance nickel aluminum silicide or germanide contact in advance without requiring additional dedicated processing steps
Solution Approach 2:
The manufacturing process utilizes self-service by allowing the nickel aluminum alloy to automatically react with the silicon or silicon germanium semiconductor material through diffusion and interfacial reactions during standard processing steps. This self-reaction forms the desired nickel aluminum silicide or germanide contact layer without requiring external intervention or additional processing equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves electron mobility and reduces contact resistance, leading to increased cell current and efficiency in three-dimensional memory devices.
Implementation Method 1
epitaxially growing a single-crystalline silicon-germanium compound semiconductor layer on a substrate single-crystalline silicon layer; epitaxially growing a strained single-crystalline silicon layer in epitaxial alignment with the single-crystalline silicon-germanium compound semiconductor layer
Implementation Method 2
strained single-crystalline silicon layer; strained silicon and silicon germanium semiconductor channels
Implementation Method 3
converting an upper part of the semiconductor drain portion into a nickel-aluminum-semiconductor alloy drain portion by reacting the upper part of the semiconductor drain portion with a nickel-aluminum-containing material to form drain region comprising the nickel-aluminum-semiconductor alloy drain portion
Data Source
AI summary
A memory device can include a strained single-crystalline silicon layer and an alternating stack of insulating layers and electrically conductive layers located over the strained single-crystalline silicon layer. A memory opening fill structure extending through the alternating stack may include an epitaxial silicon-containing pedestal channel portion, and a vertical semiconductor channel, and a vertical stack of memory elements located adjacent to the vertical semiconductor channel Additionally or alternatively, a drain region can include a semiconductor drain portion and a nickel-aluminum-semiconductor alloy drain portion.