Stress Buffering Layer in Semiconductor Packages to Reduce Warpage
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Solution Overview
Problem
The integration of semiconductor chips with increasing I/O connections leads to increased thickness and warpage of semiconductor device packages, resulting in decreased yield.
Innovation Solution
A semiconductor device package design incorporating a stress buffering layer and patterned passivation layer, with a first conductive structure, a stress buffering layer, and a second conductive structure, to alleviate warpage and enhance bonding robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of I/O connections is increased to improve electrical performance and additional functions, then the circuit layers increase in size, but the thickness and warpage of the semiconductor device package increase, resulting in decreased yield
Solution Approach 1:
The patent divides the circuit layers into multiple segments stacked vertically, allowing I/O connections to be distributed across different levels. This segmentation enables increased connectivity without proportionally increasing the lateral footprint, thereby reducing warpage while maintaining high I/O capacity
Solution Approach 2:
The patent transitions from a two-dimensional circuit layout to a three-dimensional stacked architecture. By adding the vertical dimension with multiple circuit layers, the design achieves higher I/O connection density without increasing the planar area, thus minimizing warpage and improving manufacturing precision
2Adaptability or versatility
If the circuit layers increase in size to accommodate more I/O connections, then additional functions are achieved, but the thickness of the semiconductor device package increases
Solution Approach 1:
The patent utilizes the vertical dimension by stacking multiple circuit layers, allowing additional functions and I/O connections to be integrated without increasing the lateral dimensions. This 3D architecture enables functional expansion while controlling package thickness
Solution Approach 2:
The patent implements a nested structure where multiple circuit layers are stacked one on top of another, with each layer containing functional elements. This nesting approach consolidates multiple functions into a compact vertical arrangement, reducing overall package thickness while maintaining functional complexity
3Adaptability or versatility
If the number of I/O connections is increased, then electrical performance is improved, but the warpage of the semiconductor device package increases, resulting in decreased yield
Solution Approach 1:
The patent segments the circuit layers into multiple manageable units stacked vertically, distributing the mechanical stress and thermal load across different levels. This segmentation reduces overall warpage while maintaining high I/O connection density, thereby improving manufacturing yield
Solution Approach 2:
The patent applies different material properties and structural characteristics to different regions of the device. By optimizing the local composition and structure of each circuit layer and interlayer region, the design achieves high I/O connectivity while controlling warpage through localized stress management, improving overall reliability and yield
Data Source
AI summary
A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.