Stress-Induced Thin-Film Semiconductor for Infrared Detection
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Solution Overview
Problem
Current light-sensing semiconductor materials struggle to detect near-infrared signals with wavelengths greater than 1,100 nanometers due to bandgap limitations, leading to low luminous efficiency and reliability issues in organic light-emitting display devices, and high material and manufacturing costs in micro light-emitting diode display devices.
Innovation Solution
A display panel with a light-sensing element featuring a stress induction pattern and a thin-film semiconductor is integrated near a micro light-emitting diode, allowing detection of infrared signals with wavelengths of 1,100 nanometers or greater, enhancing face, fingerprint, and vein recognition capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a related art light absorbing semiconductor material is used, then it can detect near-infrared signals with wavelength of 800 nm, but it has difficulties detecting near-infrared signals with wavelength greater than 1,100 nm due to band gap limitations
Solution Approach 1:
The patent applies parameter changes by modifying the bandgap energy of the semiconductor material through stress induction patterns. The stress patterns alter the crystal structure and electronic properties of the semiconductor, enabling it to detect longer wavelengths (greater than 1100 nm) that were previously undetectable with conventional materials.
Solution Approach 2:
The patent uses composite materials by combining the semiconductor material with stress induction patterns. This composite structure integrates the semiconductor's light-absorbing properties with the stress patterns that modify its bandgap, creating a material system capable of detecting extended wavelength ranges.
2Temperature
If compound semiconductor is used to achieve low operating temperature, then material cost and manufacturing cost increase
Solution Approach 1:
The patent employs thin-film semiconductor materials that can be deposited at low costs using conventional deposition techniques. These thin-film semiconductors, combined with stress induction patterns, achieve the desired low operating temperature performance without requiring expensive compound semiconductors, thereby reducing both material and manufacturing costs.
3Productivity
If organic light-emitting display device is used, then luminous efficiency and response speed are improved, but reliability and lifespan deteriorate due to moisture vulnerability
Solution Approach 1:
The patent substitutes the organic light-emitting mechanism with an inorganic micro light-emitting diode system. This replacement maintains the fast response speed and improved luminous efficiency while eliminating the moisture vulnerability inherent in organic materials, thereby enhancing reliability and lifespan.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved biometric recognition with higher security and precision, overcoming bandgap limitations and material cost challenges, while maintaining low noise and high resolution.
Implementation Method 1
to manufacture an infrared sensor in a photoelectric effect scheme, a minimum energy (bandgap) required for a light absorbing semiconductor material to absorb light, must be lower than an infrared light energy
Implementation Method 2
the light-sensing element can include a first pattern that induces a stress, wherein the first pattern has a convex or concave shape
Data Source
AI summary
The invention relates to a display panel and display device including the same. A display panel including a substrate including a first area and a second area; at least one light-emitting element disposed in the first area and configured to emitting light; and at least one light-sensing element disposed in the second area and configured to sense an infrared signal. Further, the at least one light-sensing element includes a first pattern including a strain inducing material patterned into a non-flat shape on the substrate; and a thin-film semiconductor disposed on the first pattern.