Stress-Moderating Regions in Semiconductor Integrated Assemblies

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Solution Overview

Problem

Conventional semiconductor dies in integrated assemblies are prone to bending, leading to component breakage due to stress imbalances caused by the density of conductive material in the stacks of alternating conductive and insulative levels.

Innovation Solution

Incorporation of stress-moderating regions within the integrated assembly to break up conductive material and alleviate stress, using materials like silicon dioxide or combinations with nitrogen, oxygen, and carbon to balance stress across the die, thereby preventing die bending.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If stacks of alternating conductive and insulative levels are used to increase memory capacity, then storage density is improved, but bending stresses increase causing die breakage

Engineering Contradiction:
Improvememory capacityVSAvoiddie structural integrity
Core Design Contradiction:
Quantity of substanceVSStrength

Solution Approach 1:

A stress-moderating layer is introduced as an intermediary between the conductive material and the die substrate. This layer mediates the stress transfer, absorbing and distributing the bending forces generated by the dense conductive stacks, thereby preventing die breakage while maintaining high storage density

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The stress-moderating layer changes the mechanical parameters of the die structure by introducing a material with different stress properties. This layer modifies the stress distribution pattern, reducing peak stresses and preventing catastrophic failure of the die under the weight of alternating conductive and insulative levels

Inventive Principle:
Principle #35Parameter changes

2Speed

If conductive material density is increased to improve memory performance, then memory speed is improved, but thermal expansion stresses increase causing die bending

Engineering Contradiction:
Improvememory speedVSAvoiddie dimensional stability
Core Design Contradiction:
SpeedVSStability of the object's composition

Solution Approach 1:

The stress-moderating layer acts as a buffer between regions of high conductive material density, mediating the thermal expansion forces. This intermediary layer accommodates dimensional changes without transmitting excessive stress to the die structure, maintaining dimensional stability despite high memory speed requirements

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The introduction of stress-moderating regions effectively reduces bending stresses, preventing die breakage and enhancing the structural integrity of semiconductor dies by redistributing and reducing the excess conductive material's impact on thermal expansion and contraction.

Implementation Method 1

alleviate the bending stresses... redistributing and reducing the excess conductive material's impact on thermal expansion and contraction

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11658132B2Integrated assemblies
Publication Date: 2023.05.23 MICRON TECHNOLOGY INC
  • US11658132B2 patent drawing
  • US11658132B2 patent drawing
  • US11658132B2 patent drawing

AI summary

Some embodiments include an integrated assembly having a semiconductor die with memory array regions and one or more regions peripheral to the memory array regions. A stack of alternating insulative and conductive levels extends across the memory array regions and passes into at least one of the peripheral regions. The stack generates bending stresses on the die. At least one stress-moderating region extends through the stack and is configured to alleviate the bending stresses.