Stress Test for Grown Bad Blocks in Non-Volatile Memory

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Solution Overview

Problem

Non-volatile memory systems face challenges in detecting and addressing grown bad blocks and short circuits, particularly between word lines and NAND strings, which can lead to data loss and system dysfunction, and existing testing methods may impact performance.

Innovation Solution

A stress test is performed on memory cells to accelerate stressful conditions and detect grown bad blocks, and a divide and conquer approach is used to rapidly locate short circuits, such as leaky word lines, by generating an enhanced electric field and applying specific voltages to identify and isolate faulty components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If testing for defects during program operation is performed, then grown bad blocks can be detected, but memory system performance is impacted

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidmemory system performance
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies preliminary action by performing stress tests on memory blocks before they are fully programmed or during idle periods. The controller identifies candidate blocks and applies enhanced stress patterns (such as repeated program-erase cycles with elevated voltages) to accelerate defect manifestation before the blocks are put into normal service, thereby detecting potential grown bad blocks without disrupting ongoing memory operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements continuity of useful action by integrating stress testing into the background garbage collection process and idle time periods. Instead of stopping memory operations to perform defect detection, the controller continuously monitors and stresses memory blocks during normal operation, ensuring that defect detection occurs without interrupting data processing or storage operations.

Inventive Principle:
Principle #20Continuity of useful action

2Reliability

If stress test is performed to detect grown bad blocks, then reliability is improved, but additional time is consumed

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidtesting duration
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies partial action by selecting only candidate blocks that meet specific criteria (such as blocks that have been erased a certain number of times or blocks showing early signs of degradation) for stress testing, rather than testing all memory blocks. This selective approach reduces the overall testing time while maintaining high detection accuracy for blocks most likely to develop defects.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent implements periodic action by performing stress tests at scheduled intervals based on memory block usage patterns, erase counts, or detected degradation trends. Instead of continuous testing of all blocks, the controller periodically selects candidate blocks for stress testing based on their operational history and risk profiles, optimizing the balance between detection accuracy and time consumption.

Inventive Principle:
Principle #19Periodic action

3Speed

If divide and conquer approach is used to locate short circuits, then detection speed is improved, but system complexity increases

Engineering Contradiction:
Improveshort circuit location speedVSAvoidtesting algorithm complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the memory array into smaller sub-arrays or blocks when searching for short circuits. The controller applies stress patterns to specific segments independently, allowing parallel processing and faster localization of defects. By segmenting the search space, the system can quickly identify which sub-array contains a short circuit without having to test the entire memory array sequentially.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements feedback by using the results from initial stress tests to guide subsequent testing steps. When a short circuit is detected in a particular block, the controller uses this information to focus subsequent divide-and-conquer searches on specific word lines or bit lines within that block, rapidly narrowing down the exact location of the defect based on feedback from each testing iteration.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively detects and isolates grown bad blocks and short circuits, reducing data loss and improving system reliability by identifying and isolating faulty components, allowing for proactive maintenance and design improvements.

Implementation Method 1

The stress test involves generating an electric field (e-field) near a junction between word lines and a NAND string

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS11967388B2Stress test for grown bad blocks
Publication Date: 2024.04.23 SANDISK TECHNOLOGIES LLC
  • US11967388B2 patent drawing
  • US11967388B2 patent drawing
  • US11967388B2 patent drawing

AI summary

Technology is disclosed herein for detecting grown bad blocks in a non-volatile storage system. A stress test may accelerate stressful conditions on the memory cells and thereby provide for early detection of grown bad blocks. The stress test may include applying a program voltage to a selected word line and a stress voltage that is less than a nominal boosting voltage to a word line adjacent one side of the selected word line. The combination of the program voltage and the stress voltage may generate an e-field that is stronger than an e-field that would be generated in a normal program operation, thereby accelerating the stress on the memory cells. The stress test mat further include programming all of the memory cells to a relatively high threshold voltage, which may create additional stress on the memory cells.