Stressed Semiconductor Substrate via Mechanical Bending
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for producing stressed silicon layers, such as epitaxy on SiGe layers, face limitations in achieving desired thickness and stress magnitude, leading to restricted stressing and metastability issues, especially when heated, which affects switching times in semiconductor components.
Innovation Solution
A semiconductor substrate with extrinsic, permanent curvature is created by mechanical bending, inducing compression, widening, or distortion of the crystal structure, allowing for locally modified lattice constants and distorted crystal structures, enabling the production of stressed layers of virtually any desired thickness without the need for complex epitaxial processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If epitaxial growing of silicon onto SiGe layers is used to produce stressed silicon, then stress is introduced to reduce switching times, but the layer thickness is limited and stress magnitude is restricted due to displacement formation and metastability
Solution Approach 1:
The patent changes the fundamental parameter of stress introduction from chemical epitaxial growth to mechanical deformation. By bending the substrate mechanically, continuous stressed layers of any thickness can be produced without the displacement limitations that constrain epitaxial methods. This allows both thick layers and high stress magnitudes to be achieved simultaneously.
2Speed
If epitaxial growing of silicon onto SiGe layers is used to produce stressed silicon, then stress is introduced to reduce switching times, but the layers become metastable and displacements occur when heated in subsequent processes
Solution Approach 1:
The patent replaces the chemical epitaxial growth process with a mechanical deformation approach. By bending the substrate to introduce stress, the method avoids the metastability issues inherent in epitaxial layers. The mechanically induced stress is stable under subsequent heating processes, eliminating displacement formation while maintaining the stress necessary for reduced switching times.
3Speed
If germanium component in SiGe layer is increased to achieve greater stress, then stress magnitude increases to reduce switching times, but displacements form beyond 20% germanium content
Solution Approach 1:
The patent changes the method of stress introduction from compositional modification (varying Ge content) to mechanical deformation (substrate bending). This allows high stress magnitudes to be achieved without increasing germanium content beyond the 20% threshold, thereby maintaining layer integrity and avoiding displacement formation while still achieving reduced switching times.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for significantly shorter switching times in semiconductor components by introducing permanent stresses through mechanical deformation, ensuring robustness and stability during subsequent processing steps without displacement, and enabling flexible curvature for optimal lattice distortion.
Implementation Method 1
A semiconductor substrate with extrinsic, permanent curvature is created by mechanical bending, inducing compression, widening, or distortion of the crystal structure
Data Source
AI summary
A semiconductor substrate, a semiconductor chip and a semiconductor component with areas composed of a stressed monocrystalline material, and a method for production of a semiconductor component is disclosed. In one embodiment, the semiconductor chip includes relatively thick stressed layers achieving reduced switching times. For this purpose, the semiconductor substrate has one or more areas with extrinsic, permanent curvature, with the crystal structure K being compressed and/or widened and/or distorted in these areas.