Stripped EMIB Layout for Thinner Multi-Die Package Routing
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Solution Overview
Problem
Integrated circuit miniaturization faces challenges due to package real estate budget issues, particularly in managing interconnect layers and signal referencing.
Innovation Solution
The fabrication of a stripped embedded multi-die interconnect bridge (sEMIB) involves seating the interconnect bridge just below the top solder-resist layer after removing the glass substrate, allowing for a low Z-height and thinner dielectric layers, which saves valuable interconnect layers and improves signal referencing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the interconnect bridge is embedded below the top solder-resist layer, then package thickness is reduced and signal referencing is improved, but the fabrication process becomes more complex
Solution Approach 1:
The interconnect bridge is fabricated and prepared on a separate glass substrate beforehand, with all necessary conductive layers and dielectric structures already in place. This preliminary fabrication allows the bridge to be seamlessly integrated into the final package, achieving reduced thickness and improved signal referencing without significantly complicating the overall process
Solution Approach 2:
The fabrication process is divided into distinct segments: first fabricating the interconnect bridge on a glass substrate, then removing the glass, and finally embedding the bare bridge into the package substrate. This segmentation allows each step to be optimized independently, managing complexity while achieving the desired compact structure
2Length of moving object
If the glass substrate is removed to create a stripped bridge, then Z-height is reduced and interconnect layers are saved, but manufacturing difficulty increases
Solution Approach 1:
A release layer is applied to the glass substrate before fabricating the interconnect bridge structures. This release layer enables easy separation of the glass from the conductive layers, allowing the glass to be removed cleanly after the bridge is formed, thus achieving low Z-height while managing manufacturing complexity
Solution Approach 2:
The release layer acts as an intermediary between the glass substrate and the interconnect bridge structures. It facilitates the removal of the glass substrate by providing a separation interface, enabling the glass to be stripped away without damaging the delicate conductive layers, thus reducing Z-height while maintaining ease of manufacture
Data Source
AI summary
An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.


