Stripping Solution for Photolithography Using Cyclic Carbonate
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Solution Overview
Problem
Existing stripping solutions for photolithography used in semiconductor and liquid crystal panel manufacturing face issues with performance degradation over time and metal corrosion when recycled, especially under heating conditions, failing to maintain effective stripping and anticorrosion properties.
Innovation Solution
A stripping solution comprising hydrofluoric acid, a specific basic compound represented by the general formula (b-1) as a counter amine, and water, which effectively balances stripping properties with anticorrosion performance and allows for continuous use over a long period.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If conventional stripping solutions (hydrofluoric acid with ammonia or 1,8-diazabicyclo[5.4.0]undecene-7) are continuously recycled for a long period, then the stripping solution can be reused, but the performance of stripping residual materials and etching residual materials deteriorates due to composition alteration
Solution Approach 1:
The patent changes the chemical parameters of the stripping solution by replacing conventional counter amines (ammonia, 1,8-diazabicyclo[5.4.0]undecene-7) with specific cyclic carbonate compounds having defined molecular structures (formula 1) and concentration ranges (0.01-5 wt%). This parameter change enables the solution to maintain stable composition and stripping performance over extended recycling periods while effectively removing residual materials.
2Productivity
If conventional stripping solutions are used under heating conditions to improve stripping performance, then stripping efficiency increases, but metal corrosion progresses more significantly
Solution Approach 1:
The patent introduces cyclic carbonate compounds as intermediary substances that mediate between hydrofluoric acid and metal surfaces. These compounds (formula 1) act as buffer agents that control the reactivity of hydrofluoric acid, enabling effective stripping of residual materials while suppressing metal corrosion even under heating conditions (up to 80°C).
3Productivity
If hydrofluoric acid is used to achieve effective stripping of residual materials, then stripping capability improves, but anticorrosion properties on metals deteriorate
Solution Approach 1:
The patent optimizes the concentration parameters of hydrofluoric acid (0.01-5 wt%) and introduces cyclic carbonate compounds (0.01-5 wt%) as counter amines. This parameter optimization creates a balanced chemical environment where hydrofluoric acid maintains sufficient stripping capability while the cyclic carbonate compounds provide adequate anticorrosion protection through controlled metal surface passivation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively strips residual photoresist and etching materials while maintaining superior anticorrosion properties on metals, preventing performance degradation and corrosion, even when used continuously, making it suitable for recycling.
Implementation Method 1
a stripping solution for photolithography which can effectively strip residual materials of a photoresist pattern and etching residual materials
Implementation Method 2
use of hydrofluoric acid and a compound containing ammonia as a counter amine thereof
Data Source
AI summary
A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.