Structured Beam Lithography for Customizable Microparticle Production

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Solution Overview

Problem

Current lithographic methods for producing microscale and nanoscale patterns require expensive masks for each new pattern, limiting the ability to create customizable structures in three dimensions without significant cost or time overhead, and struggle to produce monodisperse sets of objects at sub-millimeter scales efficiently.

Innovation Solution

A method using a substrate with a photosensitive material exposed to a structured beam of light with controlled cross-sectional shape, size, wavelength, intensity, and duration, combined with relative movement between the substrate and light source to create customizable sub-millimeter scale particles and films, allowing for on-the-fly production of complex microscale and nanoscale features without the need for new masks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional lithographic methods use expensive masks for each new pattern, then manufacturing precision is improved, but device complexity and production cost increase

Engineering Contradiction:
Improvepattern precisionVSAvoidmask complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses a single mask that creates multiple copies of the same pattern through angular multiplexing. The mask pattern is replicated at different angular positions, allowing one mask to produce multiple pattern variations simultaneously, eliminating the need for separate masks for each pattern design.

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent introduces angular positioning as an additional dimension for pattern differentiation. Instead of creating different patterns on separate masks (2D plane), the same mask pattern is utilized in multiple angular dimensions, allowing a single mask to generate multiple pattern orientations and positions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If traditional lithographic methods produce custom patterns with new masks, then manufacturing precision is improved, but productivity decreases

Engineering Contradiction:
Improvepattern precisionVSAvoidproduction throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges multiple pattern production functions into a single lithographic step. By angular multiplexing, the system combines what would traditionally require multiple separate mask alignments and exposures into one simultaneous operation, dramatically increasing throughput while maintaining precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent enables continuous pattern production by eliminating the need to change masks between different pattern designs. The angular multiplexing approach allows all pattern variations to be produced in a single continuous exposure process, removing idle time associated with mask changes.

Inventive Principle:
Principle #20Continuity of useful action

3Manufacturing precision

If traditional lithographic methods use fixed masks, then manufacturing precision is improved, but adaptability decreases

Engineering Contradiction:
Improvepattern precisionVSAvoidpattern customization
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent transforms the static, fixed mask system into a dynamic one by introducing angular positioning capabilities. The mask can be rotated or repositioned angularly to produce different pattern orientations and configurations, making the system adaptable to various design requirements while maintaining the precision of a fixed mask during each exposure.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent makes a single mask serve multiple functions by utilizing angular multiplexing. The same mask pattern can generate multiple different pattern variations depending on its angular position, providing universal applicability across different pattern design needs without requiring specialized masks for each application.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the mass production of identical, customizable nanostructured particles and films with precise control over sub-particle features, reducing production costs and time by eliminating the need for new masks and allowing for rapid design changes.

Implementation Method 1

The layer of photosensitive material has a preselected photoresponse to the structured beam of light

Methodology Applied
Scientific EffectPhotoresponse: Photopolymerisation

Data Source

PatentUS10317799B2Patterned multi-beam nanoshift lithography for on-the-fly, high throughput production of customizable shape-designed microparticles, nanoparticles, and continuous films
Publication Date: 2019.06.11 RGT UNIV OF CALIFORNIA
  • US10317799B2 patent drawing
  • US10317799B2 patent drawing
  • US10317799B2 patent drawing

AI summary

A system and a method of producing sub-millimeter scale particles are provided herein. The method includes providing a substrate that has a layer of photosensitive material thereon; exposing a portion of the layer to a structured beam of light that has a cross-sectional shape, and a cross-sectional size. The cross-sectional size of the structured beam of light at the layer of photosensitive material is smaller than a sub-millimeter scale particle. The method also includes moving the substrate or the beam of light relative to each other to follow a path for making additional exposures or continuous exposure to result in a discrete exposed pattern in the layer that corresponds to the particle being produced, and exposing the layer to the light; and processing the layer to remove unexposed material around the discrete exposed pattern and to separate the discrete exposed pattern from the layer to provide the sub-millimeter scale particle.