Structured N-Contact for LED Light Extraction
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Solution Overview
Problem
Existing optoelectronic devices, such as light-emitting diodes with semiconductor layer sequences, face challenges in forming rough p-contacts due to the thin current expansion layer, which limits light extraction and contrast in displays.
Innovation Solution
The optoelectronic device features a structured inner region and unstructured outer regions in the n-connecting contact, allowing for improved light extraction and reduced surface reflection, with the structured inner region being larger than the unstructured outer regions, enabling efficient current injection and minimizing absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a rough p-contact is formed over the entire surface, then light extraction is improved, but the thin current expansion layer is partially or completely removed
Solution Approach 1:
The contact structure is divided into two regions with different surface qualities: a structured inner region for light extraction and unstructured outer regions for current injection. This local differentiation allows the structured inner region to enhance light extraction while the unstructured outer regions preserve the thin current expansion layer for reliable current injection.
2Ease of operation
If the n-connecting contact is formed completely unstructured, then current injection is maintained, but light extraction is limited
Solution Approach 1:
The n-connecting contact is divided into structured and unstructured regions. The unstructured outer regions maintain good current injection properties, while the structured inner region enhances light extraction. This local differentiation resolves the contradiction between current injection efficiency and light extraction.
3Ease of operation
If the structured inner region is smaller than the unstructured outer regions, then current injection area is increased, but light extraction efficiency is reduced
Solution Approach 1:
The structured inner region is designed to be larger than the unstructured outer regions, creating an overlapping configuration. This partial excess of the structured region ensures that the light extraction area is maximized while still providing sufficient unstructured regions for current injection, resolving the contradiction between these two functions.
Data Source
AI summary
The invention relates to an optoelectronic device (100) comprising a semiconductor layer sequence (1) on a carrier (7), the semiconductor layer sequence (1) comprising at least one n-doped semiconductor layer (11), at least one p-doped semiconductor layer (12) and an active layer (13) sandwiched between the p- and n-doped semiconductor layers (11, 12), an reconnecting contact (2), which is configured for electrically contacting the n-doped semiconductor layer (11), a p-connecting contact (3), which is configured for electrically contacting the p-doped semiconductor layer (12), the n-connecting contact (2) being arranged on the side of the semiconductor layer sequence (1) facing away from the carrier (7), the n-connecting contact (2) having a first side (4) which is arranged facing the semiconductor layer sequence (1), wherein the first side (4) has two outer regions (43) and an inner region (44), viewed in lateral cross-section, which is delimited by the outer regions (43), wherein the outer regions (43) of the first side (4) are unstructured (42), and wherein the inner region (44) is structured (41).