Emission Control Transistor Sub-Gate Layout for Flicker Suppression
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Solution Overview
Problem
Display devices experience current leakage, leading to visible flicker issues due to defective transistors, which affect the display's performance and user experience.
Innovation Solution
Incorporating a sub-gate electrode structure in emission control transistors, where the sub-gate electrode is positioned under the active layer, enhances the transistor's turn-off characteristics, reducing leakage current and preventing flicker by applying a voltage to ensure proper shut-off even in defective transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor structures are used in display devices, then the device complexity is low and manufacturing is easier, but current leakage occurs leading to visible flicker
Solution Approach 1:
The gate electrode is divided into two separate gate electrodes (first gate electrode and second gate electrode) that are positioned at different depths within the transistor structure. This segmentation allows independent control of channel formation and current suppression, resolving the contradiction by enabling reliable transistor operation through dual-gate control while maintaining a structured but manageable device architecture
Solution Approach 2:
The invention introduces a vertical dimension to the gate electrode arrangement by positioning one gate electrode above and another below the active layer. This three-dimensional configuration enables simultaneous control of current flow from multiple directions, improving transistor reliability without significantly increasing horizontal device footprint or manufacturing complexity
2Object-generated harmful factors
If transistors with improved turn-off characteristics are used, then leakage current is reduced, but the transistor structure becomes more complex
Solution Approach 1:
The gate electrode is divided into two separate gate electrodes (first gate electrode and second gate electrode) that are positioned at different depths within the transistor structure. This segmentation allows independent control of channel formation and current suppression, resolving the contradiction by enabling reliable transistor operation through dual-gate control while maintaining a structured but manageable device architecture
Solution Approach 2:
The sub-gate electrode acts as an intermediary element positioned between the main gate electrode and the active layer. It mediates the control of current flow by providing an additional electric field that enhances the turn-off characteristics, effectively reducing leakage current while adding only a single intermediate structural element rather than completely redesigning the transistor
Data Source
AI summary
A display device may include a first pixel coupled to an emission control line, and an emission control stage for selectively coupling the emission control line to a first or second supply voltage line. The emission control stage may include: a first emission control transistor including a first electrode coupled to the first supply voltage line, a second electrode coupled to the emission control line, and a main gate electrode coupled to a first node; a second emission control transistor including a first electrode coupled to the emission control line, a second electrode coupled to the second supply voltage line, and a main gate electrode coupled to a second node; and a third emission control transistor including a first electrode coupled to the first supply voltage line, a second electrode coupled to the first node, a main gate electrode coupled to the second node, and a sub-gate electrode.