Sub Word Line Driver Layout Structure for Semiconductor Memory
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Solution Overview
Problem
Conventional semiconductor memory devices with sub word line driver structures have an increased layout area, which reduces integration efficiency and increases the size of memory devices.
Innovation Solution
A layout structure for sub word line drivers is designed with specific arrangements of N-channel and P-channel transistors, where transistors are oriented and shared conductive regions are used to reduce the layout area, allowing for a more efficient integration of semiconductor memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If sub word line drivers are positioned between adjacent sub array blocks to reduce interconnect delay, then the word line signal transmission speed is improved, but the layout area increases
Solution Approach 1:
Adjacent sub word line drivers share common conductive regions (source/drain regions) and gate lines, merging previously separate transistor structures into a compact integrated unit. This reduces the total layout area while maintaining the speed advantage of having sub word line drivers positioned between sub array blocks.
Solution Approach 2:
The shared conductive regions and gate lines serve multiple sub word line drivers simultaneously, allowing a single structure to perform multiple functions. This multi-functionality reduces the overall component count and layout area while preserving the fast signal transmission capability.
2Reliability
If conventional sub word line driver structures are used, then the circuit functionality is maintained, but the integration efficiency is reduced
Solution Approach 1:
The patent merges adjacent sub word line driver circuits by sharing conductive regions and gate lines, creating a more integrated structure. This improves integration efficiency while maintaining all necessary circuit functions through the shared components.
Solution Approach 2:
The layout structure reorganizes transistors in a compact arrangement where conductive regions are shared between adjacent drivers, effectively utilizing the two-dimensional layout space to improve integration efficiency without compromising functionality.
Data Source
AI summary
A layout structure for sub word line drivers and method thereof. The example layout structure may include at least one N-channel transistor arrangement having a cross sectional width and a cross sectional length, the N-channel transistor arrangement oriented such that the cross sectional length extends along a first direction, the first direction oriented along a sub word line driver from a first sub array block to a second sub array block. The example method may arrange the at least one N-channel transistor between the first and second sub array blocks.