Substrate Processing Apparatus Subheater Thermal Insulation
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Solution Overview
Problem
Conventional vertical substrate processing apparatuses face challenges in heating substrates at the lower portion of the process chamber, leading to prolonged heating times due to heat leakage.
Innovation Solution
Incorporating a thermal insulating unit with a subheater and a purge gas supply system to reduce heat loss and enhance heating efficiency, where the subheater is positioned inside the thermal insulating unit and the purge gas is supplied to isolate it from the process gas, preventing film formation on the subheater and maintaining temperature uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If a conventional vertical substrate processing apparatus is used, then the structure is simple, but heat leaks through the lower portion of the process chamber causing prolonged heating time
Solution Approach 1:
The heating system is segmented into multiple independent heating zones: a first heater (heating coil) wrapped around the process chamber and a second heater (subheater) positioned at the lower portion inside the process chamber. This segmentation allows targeted heating of different regions, particularly addressing the heat leakage issue at the lower portion without requiring complete structural redesign.
Solution Approach 2:
A purge gas supply unit is introduced as an intermediary component that supplies inert gas to the lower portion of the process chamber. This purge gas acts as a thermal barrier and prevents process gas from contacting the subheater, thereby preventing film formation on the subheater surface while maintaining effective heat transfer to the substrate.
2Productivity
If a subheater is added to reduce heating time, then heating efficiency improves, but film deposition occurs on the subheater surface
Solution Approach 1:
A purge gas (inert gas) supply unit is positioned to supply inert gas to the lower portion of the process chamber where the subheater is located. This creates an inert atmosphere around the subheater that prevents process gas from contacting the subheater surface, thereby preventing unwanted film deposition while allowing the subheater to maintain high temperature for efficient substrate heating.
3Speed
If the process chamber is heated from the lower portion, then heating speed increases, but temperature uniformity on the substrate surface deteriorates
Solution Approach 1:
The heating system is divided into two segmented heating zones: the first heater (heating coil) wrapped around the upper and middle portions of the process chamber, and the second heater (subheater) positioned at the lower portion. This segmentation enables coordinated heating from multiple zones, achieving both rapid heating (from the lower subheater) and temperature uniformity (from the distributed first heater), thereby resolving the contradiction between heating speed and temperature uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the heating-up time of the process chamber, improves temperature uniformity on the substrate surface, and prevents film deposition on the subheater, thereby enhancing productivity and maintaining heating performance.
Implementation Method 1
a first heater installed outside the process chamber and configured to heat an inside of the process chamber
Implementation Method 2
as a process gas is introduced into the process chamber with the substrate heated by a heater
Implementation Method 3
a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber
Implementation Method 4
a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber
Implementation Method 5
a thermal insulating unit disposed under the substrate retainer
Implementation Method 6
a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit
Data Source
AI summary
Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.