Sublimate Support for Semiconductor Pattern Collapse
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Solution Overview
Problem
During the manufacturing process of semiconductor devices, miniature structures on the substrate are prone to collapse due to surface tension when drying after liquid treatments, especially for substrates with shrunk and high-aspect-ratio patterns.
Innovation Solution
A method involving a liquid treatment where a first liquid is substituted with a solution containing a sublimate dissolved in a second liquid, vaporizing the second liquid to precipitate a solid sublimate on the substrate, which supports the structures and prevents collapse by sublimating without going through a liquid state, thereby avoiding pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional drying methods are used after liquid treatment, then the manufacturing process is simple and fast, but the miniature structures on the semiconductor substrate collapse due to surface tension
Solution Approach 1:
A solid sublimate material is introduced as an intermediary substance between the liquid treatment and final drying stages. This sublimate forms a temporary support structure that prevents pattern collapse during drying, then is removed by sublimation. The intermediary material mediates between the need for liquid treatment and the need to maintain pattern integrity during drying.
Solution Approach 2:
The solution utilizes phase transitions of the sublimate material, which transitions from solid to gas directly (sublimation) without passing through the liquid state. This phase transition property allows the material to provide structural support in solid form, then be completely removed by heating without leaving residue, solving the contradiction between providing support and maintaining simplicity.
2Reliability
If conventional drying methods are used, then the process is fast and simple, but surface tension causes collapse of high-aspect-ratio patterns
Solution Approach 1:
The solid sublimate material is applied in advance before the drying step to provide preliminary support to the miniature structures. This preliminary action prevents pattern collapse during the subsequent drying process, ensuring structure stability without significantly extending the overall process time.
Solution Approach 2:
The method replaces mechanical drying support systems with a chemical/physical approach using sublimation. Instead of using mechanical means to support structures during drying, the patent uses the phase transition properties of the sublimate material to provide support and removal, simplifying the mechanical complexity while improving reliability.
3Manufacturing precision
If a solid support material is used to prevent collapse, then pattern integrity is maintained, but the removal process becomes complex
Solution Approach 1:
The sublimate material's unique phase transition property (solid to gas directly) is exploited to simplify the removal process. After providing structural support during drying, the material is completely removed by heating to induce sublimation, eliminating the need for complex chemical etching or mechanical removal processes. This maintains both pattern integrity and manufacturing simplicity.
Solution Approach 2:
The solid sublimate material functions as a temporary, disposable support structure that is intentionally designed to be short-lived. It provides necessary support during the critical drying phase, then is completely removed by sublimation without trace, similar to using temporary fixtures or jigs in manufacturing that are discarded after serving their purpose.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively inhibits the collapse of structures during drying by providing support through the sublimation process, ensuring the integrity of fine patterns on semiconductor substrates.
Implementation Method 1
vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate
Implementation Method 2
removing the precipitate by sublimation
Implementation Method 3
vaporizing the second liquid
Data Source
AI summary
A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.