Sub-Pixel Capacitor Shorting for Low-Damage Display Repair
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Solution Overview
Problem
Display devices with light emitting diodes (LEDs) face challenges in efficiently darkening defective sub-pixels and minimizing damage to surrounding areas during repair processes, particularly due to static electricity and the complexity of existing repair methods.
Innovation Solution
A display device design that includes a first substrate with sub-pixels, transistors, capacitors, and reflection plates, allowing for the easy darkening of defective sub-pixels through welding processes and connection to normal pixel circuits using low-power lasers, reducing peripheral damage and simplifying the repair process by utilizing reflection plates and capacitors without additional structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of repair
If a welding process is used to darken defective sub-pixels, then the defective sub-pixel can be easily darkened, but damage to the periphery of the welding area increases
Solution Approach 1:
The patent changes the power parameter of the laser used in the welding process from high power to low power. This parameter change allows the welding process to effectively darken defective sub-pixels while reducing the thermal damage to the periphery of the welding area, thus resolving the contradiction between repair effectiveness and peripheral damage.
2Power
If a high power laser is used for welding, then the welding process is more effective, but the damage to the periphery of the welding area increases
Solution Approach 1:
The patent explicitly changes the laser power parameter from high to low, demonstrating that lower power can achieve the same welding effect with reduced peripheral damage. This parameter optimization resolves the contradiction between welding effectiveness and peripheral damage.
3Ease of repair
If reflection plates are connected during repair, then connection to normal pixel circuits is achieved, but defects from static electricity occur
Solution Approach 1:
The patent introduces an intermediary structure (the specific connection structure between reflection plates) that facilitates electrical connection while managing static electricity. The connection structure is designed to minimize static electricity accumulation and discharge, thus reducing defects while achieving proper circuit connection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective darkening of defective sub-pixels in two welding processes and re-darkening in one cutting process, reduces damage to the periphery during repair, and minimizes defects from static electricity, simplifying the display device structure and improving repair efficiency.
Implementation Method 1
a defective sub pixel is darkened only by two welding processes
Implementation Method 2
connection to normal pixel circuits using low-power lasers, reducing peripheral damage
Implementation Method 3
a display device which connects a light emitting diode of a darkened sub pixel to a pixel circuit of a normal sub pixel by one welding process using a reflection plate
Data Source
AI summary
Discussed is a display device including a substrate including a plurality of pixels, a plurality of sub pixels of one of the plurality of pixels including at least one defective sub pixel and a plurality of none-defective sub pixels; a light emitting diode disposed in each of the plurality of sub pixels, a driving transistor having a source electrode connected to a first electrode of the light emitting diode, and a capacitor which includes a plurality of capacitor electrodes connected to a gate electrode and the source electrode of the driving transistor. The plurality of capacitor electrodes is in contact with each other in the at least one defective sub pixel. In the at least one defective sub pixel, the plurality of capacitor electrodes are connected to each other to connect the gate electrode and the source electrode of the driving transistor.