Semiconductor Substrate Alignment via Crystal Lattice Diffraction
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Solution Overview
Problem
The performance of semiconductor structures critically depends on the accuracy of alignment between substrates with different crystal orientations, which is challenging to maintain in photolithographic and other processes, leading to misalignment issues in forming field effect transistors.
Innovation Solution
Determining the relative orientation of crystal lattices in a semiconductor structure by irradiating it with radiation and measuring diffraction patterns, allowing for precise alignment before further processing steps, such as forming field effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If substrates with different crystal orientations are used to enhance transistor performance, then charge carrier mobility is improved, but alignment precision between substrates deteriorates
Solution Approach 1:
The patent applies preliminary action by determining the relative orientation of crystal lattices in advance, before forming transistors. This allows the alignment information to be obtained beforehand and used to guide subsequent processing steps, ensuring precise alignment without requiring complex real-time adjustments during transistor fabrication.
Solution Approach 2:
The patent implements feedback by using the determined relative orientation information to adjust and optimize the alignment between substrates during the transistor formation process. This feedback loop ensures that the actual alignment matches the planned alignment, resolving the contradiction between using different crystal orientations and maintaining manufacturing precision.
2Manufacturing precision
If additional alignment process steps are added to improve substrate alignment, then manufacturing precision is improved, but process complexity and time increase
Solution Approach 1:
The patent reduces process complexity by performing the alignment determination in advance, before the main transistor fabrication process. This preliminary determination allows the alignment information to be embedded in the process planning, eliminating the need for complex real-time alignment adjustments and reducing the number of additional process steps required.
Solution Approach 2:
The patent replaces complex mechanical alignment systems with a method based on determining crystal lattice orientations through scientific measurement. This substitution reduces the mechanical complexity of alignment equipment and procedures while achieving the same or better alignment precision through a more straightforward measurement and calculation approach.
3Ease of manufacture
If conventional alignment methods are used, then process simplicity is maintained, but alignment accuracy deteriorates
Solution Approach 1:
The patent replaces conventional mechanical alignment methods with a scientific measurement approach based on crystal lattice orientation determination. This substitution maintains process simplicity by using a straightforward measurement procedure while significantly improving alignment accuracy through the precise determination of relative crystal orientations.
Solution Approach 2:
The patent improves alignment accuracy by changing the parameter used for alignment determination from conventional mechanical reference markers to crystal lattice orientations. This parameter change allows for more precise alignment because the crystal lattice provides a fundamental, invariant reference framework that is inherently more accurate than mechanical alignment markers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate alignment between substrates with different crystal orientations, improving the quality of semiconductor structures and reducing the time and cost associated with additional process steps, thereby enhancing the performance and reliability of integrated circuits.
Implementation Method 1
irradiating it with radiation and measuring diffraction patterns
Data Source
AI summary
According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.