Semiconductor Substrate Alignment Marks with Varying Lengths

The patent applies asymmetry by designing alignment marks with different lengths instead of uniform dimensions. Specifically, the alignment marks include a first alignment mark with a first length and a second alignment mark with a second length different from the first length. This asymmetric configuration enables more precise measurement of alignment accuracy by providing multiple reference points with varying dimensions, thereby resolving the contradiction between measurement precision and device complexity.

The patent applies parameter changes by varying the length parameter of alignment marks while maintaining their basic structural characteristics. The alignment marks are configured with different lengths (first length vs. second length) to enable more accurate shift measurements between layers. This parameter variation approach improves measurement precision while keeping the manufacturing process relatively straightforward, as it only requires modifying one dimension parameter rather than fundamentally changing the fabrication methodology.