Substrate Backside Gas Pressure Control for Uniform Processing
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Solution Overview
Problem
In semiconductor manufacturing, the increasing complexity and miniaturization of devices on substrates pose challenges in achieving uniformity during processes like gate electrode formation and thin film deposition, particularly in high-aspect-ratio structures, where existing methods struggle to maintain consistent critical dimensions and film thickness across the substrate.
Innovation Solution
The method involves dynamically controlling gas pressure on the backside of a substrate using a vacuum chamber with multiple zones of gas inlet and outlet ports, allowing for separate pressure control in different areas to induce local deformation and achieve a predetermined deformation profile, thereby enhancing process uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional uniform processing is used across the substrate, then the manufacturing process is simple, but the uniformity of critical dimensions and film thickness deteriorates in high-aspect-ratio structures
Solution Approach 1:
The substrate support surface is divided into multiple independently controllable zones with separate gas inlet and outlet ports. Each zone can be pressurized or evacuated independently to create localized deformation profiles, enabling precise control of substrate shape in different regions during processing
Solution Approach 2:
Different zones of the substrate are given different pressure conditions to create specific local deformation characteristics. This allows the substrate to have varying shapes in different areas, optimizing the processing conditions for high-aspect-ratio structures while maintaining simplicity in other regions
2Manufacturing precision
If the substrate is kept flat during processing, then the processing system is simple to operate, but the treatment uniformity on side-walls and flat surfaces deteriorates
Solution Approach 1:
The substrate shape is dynamically adjusted during processing by controlling the pressure in different zones. The system can transition between flat and deformed states, or maintain intermediate shapes, allowing optimization for different processing steps without requiring complex mechanical repositioning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of local pressure forces on the substrate, improving the uniformity of substrate processing by allowing for dynamic deformation, which can reduce crystal defects and enhance the treatment of side-walls during deposition or etching processes.
Implementation Method 1
separately controlling the pressure of the backside gas at different ones of the ports to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate
Data Source
AI summary
A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.