Substrate Support Backside Pressure for Temperature Uniformity
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Solution Overview
Problem
Current semiconductor deposition processes face challenges in achieving uniform temperature profiles on substrate supports, leading to non-uniform film thickness due to temperature non-uniformity, which becomes critical as device sizes shrink.
Innovation Solution
The method involves coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline, maintaining a backside pressure higher than the foreline pressure, and adjusting the gap height between protrusions on the substrate support to enhance thermal uniformity and control temperature profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vacuum chucking is used to hold the substrate, then substrate positioning is achieved, but temperature uniformity deteriorates due to insufficient molecular mass for heat conduction
Solution Approach 1:
The patent changes the pressure parameter in the fluid conduit from vacuum (low pressure) to pressurized gas (high pressure). This parameter change increases the molecular mass and density of the gas, thereby improving heat conduction capability while maintaining substrate positioning through the fluid conduit system
2Temperature
If gas flow is increased to improve heat conduction, then temperature uniformity improves, but system pressure control becomes more complex
Solution Approach 1:
The fluid conduit system is designed to serve multiple functions: it provides substrate positioning through vacuum chucking, enables pressure control for heat conduction enhancement, and allows gas flow distribution. This multi-functionality reduces the need for separate systems and simplifies overall pressure control complexity
3Temperature
If protrusion gap height is reduced to improve thermal contact, then heat conduction improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses pressurized gas flow through the fluid conduit to enhance heat conduction without requiring reduced protrusion gap heights. The pneumatic pressure provides the necessary molecular mass and energy for improved thermal transfer, eliminating the need for precision mechanical adjustments of the protrusion gaps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves temperature control and reduces film thickness non-uniformity by increasing molecular mass for better heat conduction and allows for precise adjustment of deposition characteristics, addressing the limitations of conventional systems.
Implementation Method 1
improves temperature control and reduces film thickness non-uniformity by increasing molecular mass for better heat conduction
Implementation Method 2
coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support
Data Source
AI summary
Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.