Substrate Bake Gas Control for Center Film Thickness Uniformity
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Solution Overview
Problem
The existing substrate treatment processes face challenges in uniformly forming film thickness, particularly on the central region of the substrate, during the deposition and coating processes, leading to inconsistencies in film thickness before and after the bake process.
Innovation Solution
A substrate treating apparatus and method that includes a process chamber with a heating unit, exhaust unit, and a gas supply unit capable of adjusting the temperature and flow rate of gases supplied to the substrate, using a dual gas supply system to ensure uniform film thickness on the central region by measuring the film thickness and controlling the gas supply accordingly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a general bake process apparatus is used to heat the substrate, then the substrate can be heated to the required temperature, but the film thickness cannot be uniformly formed, especially on the central region of the substrate
Solution Approach 1:
The gas supply unit is configured to supply gas preferentially to the central region of the substrate during the bake process. The controller adjusts the gas supply amount based on the detected film thickness, providing localized gas flow to the central region where film thickness adjustment is most needed, thereby achieving uniform film thickness across the entire substrate surface
Solution Approach 2:
The apparatus employs a feedback control mechanism where a detector measures the film thickness on the substrate surface, and the controller uses this information to adjust the gas supply amount. This closed-loop feedback system enables real-time adjustment of film thickness, particularly in the central region, to achieve the desired uniformity
2Manufacturing precision
If gas is supplied uniformly across the substrate, then the process is simple, but the film thickness on the central region cannot be effectively adjusted
Solution Approach 1:
The gas supply system is divided into multiple independent gas supply units, each capable of supplying gas to different regions of the substrate. This segmentation allows the controller to independently adjust gas flow to the central region versus the peripheral regions, enabling precise film thickness control on the central region while maintaining a manageable system structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively adjusts the film thickness on the central region of the substrate to a predetermined value by varying the temperature and flow rate of the gas, ensuring uniformity and consistency in the film formation process.
Implementation Method 1
a heating unit that is provided inside the support unit and that heats the substrate
Implementation Method 2
an exhaust unit that evacuates the process space
Implementation Method 3
a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature
Data Source
AI summary
An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.