Substrate Processing Apparatus Blocking Gas Flow Control
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving uniform processing across and between substrates, leading to variations in thin film thickness and gas distribution.
Innovation Solution
The apparatus includes a process chamber with a blocking gas supply unit and injector to control the flow of process gases, ensuring uniform distribution by inhibiting gas flow into upper and lower spare spaces, and a main control unit to manage gas supply and exhaust, thereby improving in-substrate and inter-substrate uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process gas is supplied to the process chamber without flow control, then gas supply is simple, but gas distribution uniformity across substrates deteriorates
Solution Approach 1:
A blocking gas is introduced as an intermediary substance to control and regulate the flow of process gas. The blocking gas creates a controlled flow pattern that prevents direct, uncontrolled movement of process gas, thereby achieving uniform gas distribution and consistent thin film thickness across all substrates without requiring complex mechanical flow control mechanisms.
Solution Approach 2:
The invention uses gas flow dynamics and pressure control to achieve uniform process gas distribution. By controlling the pressure and flow rate of the blocking gas, the system creates a controlled pneumatic environment that directs process gas flow uniformly across the substrate array, eliminating the need for complex mechanical flow control devices.
2Manufacturing precision
If process gas flows freely into upper and lower spare spaces, then gas supply is simple, but processing uniformity between substrates deteriorates
Solution Approach 1:
The blocking gas acts as a mediator that occupies the upper and lower spare spaces, preventing process gas from flowing into these regions. This intermediary gas creates a pressure barrier that directs process gas flow exclusively onto the substrates, ensuring uniform processing across all substrates without requiring complex physical barriers or flow control mechanisms.
3Manufacturing precision
If no blocking gas is used, then the system is simpler, but in-wafer and inter-wafer uniformity deteriorates
Solution Approach 1:
The system controls the flow rate and pressure parameters of the blocking gas to achieve optimal uniformity. By carefully adjusting these parameters, the blocking gas effectively controls process gas distribution without excessive consumption, maintaining a balance between processing uniformity and gas efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of thin film thickness and gas distribution across substrates, regardless of their position, improving both in-wafer and inter-wafer processing uniformity.
Implementation Method 1
a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled
Implementation Method 2
a process gas supply unit configured to supply at least one process gas to the substrates stacked in the process chamber through a process gas supply nozzle
Implementation Method 3
A plasma generation unit may be at one side of the process chamber and configured to generate the plasma gas by exciting the process gas supplied into the process chamber
Data Source
AI summary
A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.