Semiconductor Substrate Bonding With Dual Adhesive Thickness Control
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Solution Overview
Problem
Existing semiconductor manufacturing processes face issues with insulating substrate warpage and misalignment due to bending forces, leading to cracks and reduced thermal resistance.
Innovation Solution
A method involving the application of a hot melt adhesive with a specific film thickness followed by a thermosetting adhesive, ensuring parallelism and uniform contact by adjusting adhesive thickness through heating steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the case and case fitting jig are fastened to each other, then the insulating substrate and case are temporarily fixed, but a bending force causing warpage is applied and cracks may form in the insulating layer
Solution Approach 1:
A protruding spacer is placed on the case fitting jig before the insulating substrate is attached. This spacer pre-establishes the correct thickness and positioning, ensuring that when the case is fastened to the jig, the insulating substrate is held at the proper distance without excessive bending force, thus preventing cracks in the insulating layer.
Solution Approach 2:
The protruding spacer acts as an intermediary element between the case fitting jig and the insulating substrate. It mediates the mechanical interaction by providing a controlled thickness barrier that distributes the fastening force evenly, preventing direct transmission of bending forces that would cause warpage and cracking.
2Adaptability or versatility
If dimensional variations of members are present, then the insulating substrate may be fixed in an inclined state, but this causes cracking at joining or reduced thermal resistance
Solution Approach 1:
The protruding spacer provides localized thickness control at critical contact points between the insulating substrate and the case fitting jig. By concentrating the thickness-maintaining function at these specific locations, the spacer ensures proper alignment and prevents inclined fixing even when other parts of the assembly have dimensional variations, thereby maintaining reliable thermal contact.
Solution Approach 2:
The invention controls the thickness parameter of the adhesive layer by using a protruding spacer with a predetermined thickness. This fixed thickness parameter compensates for dimensional variations in the members, ensuring that the insulating substrate remains parallel to the case bottom surface during joining, thus preventing cracking and maintaining thermal resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents insulating substrate misalignment and maintains parallelism between the case and substrate, reducing stress concentration and potential cracking.
Implementation Method 1
a hot melt adhesive having a film thickness L1 is applied to an upper surface of the peripheral edge portion of the insulating substrate
Implementation Method 2
the temporarily fixed insulating substrate and the case are heated to fix the insulating substrate and the case
Implementation Method 3
a thermosetting adhesive having a film thickness L2 is applied to a periphery of a region to which the hot melt adhesive is applied
Data Source
AI summary
A method of manufacturing the semiconductor device includes: the application step of applying the hot melt adhesive having the film thickness L1 to the upper surface of the peripheral edge portion of the insulating substrate, and then applying the thermosetting adhesive having the film thickness L2 to the periphery of the region to which the hot melt adhesive is applied on the upper surface of the peripheral edge portion of the insulating substrate; the temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case fitting jig with screws; and the heating step of heating the temporarily fixed insulating substrate and the case to fix the insulating substrate and the case. L1>L2 in the temporary fixing step, and L1=L2 in the heating step.