Substrate Fusion Bonding with Local Curvature Control
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving precise alignment and reducing distortions during the fusion bonding process of substrates, particularly due to distortions caused by the bond wave and the formation of edge voids, which affect the electrical connectivity of functional units like vias and microchips.
Innovation Solution
A method and apparatus that modify the curvature of substrates locally through a deformation system, adjusting the curvature of substrates adjacent to the bond wave to ensure precise alignment and minimize distortions, using fixing elements and coatings to control the bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bond wave is formed during fusion bonding, then bonding between substrates is achieved, but distortions occur and positional accuracy deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-deforming the substrates before bonding to compensate for the distortions that will occur during bond wave propagation. The deformation system modifies the substrate shape in advance so that when bonding occurs and the bond wave passes through, the substrates end up in the correct aligned position rather than distorted positions.
Solution Approach 2:
The patent implements preliminary anti-action by applying opposite deformations to counteract the expected distortions from the bond wave. The deformation system creates preliminary distortions that are equal and opposite to those caused by bonding, so that when both effects combine, the net distortion is minimized and positional accuracy is maintained.
2Productivity
If the bond wave advances along the bonding direction, then bonding progresses, but edge voids form and electrical connectivity is compromised
Solution Approach 1:
The deformation system performs preliminary action by pre-positioning the substrates to prevent edge void formation during bonding. By adjusting the substrate curvature and position before the bond wave arrives, the substrates are prepared to bond uniformly across the surface, ensuring that edge regions maintain proper contact and electrical connectivity throughout the bonding process.
3Reliability
If substrates are directly bonded without deformation control, then bonding is achieved, but alignment precision of vias and functional units deteriorates
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the deformation parameters of the substrates during the bonding process. The deformation system modifies physical parameters such as substrate curvature, position, and shape to maintain optimal alignment conditions throughout the bonding process, ensuring that vias and functional units remain precisely aligned despite the advancing bond wave.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances positional accuracy and reduces distortions, minimizing edge voids and improving the electrical connectivity of functional units by optimizing the alignment of substrates during the bonding process.
Implementation Method 1
a first curvature of the first substrate and/or a second curvature of the second substrate is modified by means of a deformation system in a region adjacent to the bond wave
Implementation Method 2
A fusion bond is a direct bond of dielectric substrate surfaces, in particular substrate surfaces made of oxide
Implementation Method 3
using fixing elements and coatings to control the bonding process
Data Source
AI summary
A method of bonding a first substrate (2u) to a second substrate (2o), the first substrate(2u) having a primary section and the second substrate (2o) having a secondary section, wherein when the first substrate (2u) is bonded to the second substrate (2o), a bond wave (3) advancing along a bonding direction is formed betweena first partial portion, in which the first substrate (2u) and the second substrate (2o) are bonded, anda second partial portion, in which the first substrate (2u) and the second substrate (2o) are still to be bonded,wherein preferably a subsection of the second substrate (2o) in the second partial section is vertically offset with respect to a subsection of the second substrate (2o) in the first partial portion in a direction perpendicular to a main extension plane, andwherein for the relative alignment of the primary section and the secondary section with respect to one another, in particular with respect to a direction running essentially parallel to the bonding direction, a first curvature of the first substrate (2u) and/or a second curvature of the second substrate (2o) is modified by means of a deformation system in a region adjacent to the bond wave (3) and/or in a region including the bond wave (3).