Substrate Edge Bonding With Mid-IR Heating to Prevent Edge Voids
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Solution Overview
Problem
The existing bonding methods for semiconductor-on-insulator substrates often result in 'edge-void' defects due to the propagation of bonding waves, which can be exacerbated by heating methods that damage the substrate carrier, leading to instability and non-reproducibility.
Innovation Solution
A method using an infrared lamp to heat the peripheral zone of the substrates before and during contact, with the lamp configured to emit radiation in a wavelength range that preferentially absorbs by water at the bonding interface, reducing the heating of the carrier and minimizing edge voids by controlling the bonding wave speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If halogen lamp heating is applied to control bonding wave speed, then edge void formation is reduced, but carrier damage occurs leading to process instability
Solution Approach 1:
The patent changes the wavelength parameter of the heating source from visible/near-infrared (halogen lamp) to mid-infrared range (2.5-3.7 μm), which matches water's absorption peak. This parameter change allows selective heating of water at the bonding interface without overheating the carrier, resolving the contradiction between edge void prevention and carrier protection
Solution Approach 2:
The patent uses water as an intermediary medium to transfer thermal energy selectively to the bonding interface. By targeting water's specific absorption characteristics in the mid-infrared range, the heating energy is mediated through water molecules at the interface, preventing direct carrier heating while still controlling bonding wave propagation
2Manufacturing precision
If heating intensity is increased to control bonding wave propagation, then bonding precision improves, but carrier deformation increases
Solution Approach 1:
The patent applies local quality by concentrating heating energy specifically at the bonding interface through water's selective absorption of mid-infrared radiation. The interface region receives intense localized heating for precise bonding wave control, while the carrier remains relatively cool and undamaged, achieving both precision and structural integrity
3Manufacturing precision
If heating duration is extended to ensure complete bonding, then bonding quality improves, but carrier damage worsens
Solution Approach 1:
The patent employs periodic or controlled-duration mid-infrared heating pulses that target water absorption events during the bonding process. By synchronizing heating cycles with the bonding wave propagation and utilizing water's rapid absorption characteristics, complete bonding is achieved in shorter timeframes without prolonged carrier exposure to damaging temperatures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the formation of edge voids, enhances the stability and reproducibility of the bonding process, and prevents damage to the substrate carrier, resulting in higher-quality semiconductor-on-insulator substrates with reduced defects.
Implementation Method 1
the heating being implemented by means of an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates
Implementation Method 2
emit radiation in a wavelength range that preferentially absorbs by water at the bonding interface
Implementation Method 3
heating of a peripheral zone of at least one of the first and second substrates, the heating being initiated before the substrates are brought into contact
Data Source
AI summary
A method for bonding a first substrate and a second substrate comprises bringing the first and second substrates into contact and implementing heating of a peripheral zone of at least one of the first and second substrates. The heating is initiated before the substrates are brought into contact and continued at least until the substrates are brought into contact in the zone. The heating is implemented by an infrared lamp configured to emit radiation having an outer boundary corresponding to the edge of the substrates.