Room-Temperature Substrate Bonding via Particle Beam Irradiation

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Solution Overview

Problem

Conventional substrate bonding methods involving heat treatments are limited by thermal stress and are not suitable for materials with low heat resistance, and standard-temperature bonding methods struggle with certain materials like silicon oxide and ceramic materials, limiting the range of applicable substrates.

Innovation Solution

A method involving surface treatment with radiated particles, including energetic particles, followed by the formation of a silicon thin film on the substrate surface to enhance bonding strength, allowing for bonding of various substrate materials without the need for high-temperature processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If heat treatment is used to promote chemical reactions and atomic diffusion for bonding, then bonding strength is improved, but thermal stress damages substrates with low heat resistance and causes residual stresses in substrates with different thermal expansion coefficients

Engineering Contradiction:
Improvebonding strengthVSAvoidthermal stress
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

The invention changes the bonding temperature parameter from high temperature (heat treatment) to room temperature, eliminating thermal stress while achieving strong bonding through particle beam irradiation that promotes chemical reactions and atomic diffusion at low temperatures

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention replaces the thermal field (heat treatment) with a particle beam field (ion beam or plasma), using physical irradiation to achieve chemical reactions and atomic diffusion without thermal stress, thus substituting a mechanical/physical process for a thermal process

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Object-affected harmful factors

If standard-temperature bonding methods are used to avoid thermal stress, then substrate damage is reduced, but bonding strength is insufficient for certain materials like silicon oxide and ceramic materials

Engineering Contradiction:
Improvethermal stressVSAvoidbonding strength
Core Design Contradiction:
Object-affected harmful factorsVSStrength

Solution Approach 1:

The invention replaces conventional room temperature bonding methods with particle beam irradiation, using physical energy input to activate chemical reactions and atomic diffusion at room temperature, achieving strong bonding for difficult materials without thermal stress

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The particle beam irradiation is applied in a controlled, periodic manner to gradually build up bonding strength through cumulative chemical reactions and atomic diffusion, enabling strong bonding for materials like silicon oxide and ceramics at room temperature

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach achieves sufficient bonding strength across different substrate materials, even at room temperature, without the limitations of traditional heat-based methods, as demonstrated by increased bonding strengths in silicon-based substrate assemblies.

Implementation Method 1

a surface treatment step of surface-treating a surface of a substrate by irradiation with radiated particles including energetic particles

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

a step of forming a silicon thin film on the surface-treated substrate surface

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentEP2672507B1Bonding-substrate fabrication method, bonding-substrate fabrication apparatus, and substrate assembly
Publication Date: 2020.12.30 SUGA
  • EP2672507B1 patent drawingFigure 1~2
  • EP2672507B1 patent drawingFigure 3(A)~4
  • EP2672507B1 patent drawingFigure 5(A)~6(C)

AI summary

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.