Substrate Bonding Chamber Pressure Control for Run-Out Accuracy
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Solution Overview
Problem
The challenge in microelectronics and microsystem technology is to achieve precise alignment and bonding of substrates with minimal 'run-out' errors, which occur due to distortions during the bonding process, limiting the lateral density of functional units on substrates and affecting the accuracy of microchip production.
Innovation Solution
A method and device for bonding substrates that involve influencing the bonding wave by controlled changes in pressure, temperature, and spacing within a sealed bonding chamber, using mechanisms such as pressure-changing means and spacing-changing means to retard or accelerate the bonding wave, ensuring precise alignment and minimizing 'run-out' errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrates are bonded using conventional fusion bonding without dynamic control, then the bonding process is simple, but 'run-out' errors occur due to substrate distortions during bonding
Solution Approach 1:
The patent applies dynamics by making the bonding chamber pressure variable during the bonding process. The pressure is dynamically adjusted to influence the bonding wave propagation speed, allowing control over substrate distortion and run-out errors. This transforms the static bonding process into a dynamic one where pressure conditions can be optimized in real-time during bonding.
Solution Approach 2:
The patent changes the pressure parameter during the bonding process to control the bonding wave. By varying the pressure within the bonding chamber, the speed and propagation of the bonding wave can be influenced, thereby controlling substrate distortion and improving bonding accuracy while managing the complexity through parameter optimization.
2Productivity
If the bonding wave propagates quickly across the substrate, then productivity is improved, but alignment precision deteriorates due to increased run-out errors
Solution Approach 1:
The bonding wave speed is made dynamic through real-time pressure adjustment. The pressure can be increased to accelerate the bonding wave for faster productivity, or decreased to slow down the bonding wave for better alignment precision. This dynamic control allows optimization of the trade-off between speed and precision based on specific bonding requirements.
Solution Approach 2:
The patent applies preliminary anti-action by pre-adjusting the pressure conditions before and during the bonding wave propagation to counteract potential run-out errors. By anticipating the distortion that would occur at high speeds, the pressure is adjusted in advance to compensate and maintain alignment precision even during faster bonding processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances bonding accuracy and reduces 'run-out' errors by dynamically controlling the bonding wave, allowing for precise alignment and correct positioning of substrates, thereby improving the overall bonding quality and density of functional units on substrates.
Implementation Method 1
the substrates are fixed together by relatively weak atomic forces such as the van der Waals forces
Implementation Method 2
bonded together in a molecular and/or atomic manner by the formation of covalent bonds
Implementation Method 3
a chemical and/or physical strengthening of the bonding of the surfaces of the two substrates arises due to the supply of the thermal energy
Data Source
AI summary
A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.