Substrate Bonding via Thermal Deformation and Surface Activation

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Solution Overview

Problem

Large-sized microchips face bonding challenges due to substrate warpage and undulation, leading to defective bonds, air bubbles, and stress concentration, which hinder the production of microchips with multiple measurement units and varied structures.

Innovation Solution

A method of bonding substrates where one substrate is deformed to conform to the shape of the other by heating above its deformable temperature but below the other's, ensuring close contact and high adhesion, using surface activation techniques like ultraviolet irradiation or plasma treatment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If adhesive bonding is used to bond two substrates, then bonding strength is improved, but the adhesive may seep into the minute flow path causing clogging, narrowing, or uneven diameter

Engineering Contradiction:
Improvebonding strengthVSAvoidflow path uniformity
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The adhesive is completely removed from the bonding process. Instead of using adhesive bonding, the patent employs direct substrate-to-substrate bonding through surface activation (plasma treatment or UV irradiation) followed by thermal fusion, eliminating the risk of adhesive contamination in the flow path entirely

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediary bonding mechanism involving plasma-treated or UV-activated surfaces that create strong adhesion without requiring traditional adhesives. The activated surfaces form a bonding interface that achieves strong bonding while maintaining flow path integrity

Inventive Principle:
Principle #24Intermediary (Mediator)

2Strength

If thermal fusion bonding is used at high temperature, then bonding strength is improved, but the flow path may be crushed or deformed at the heating step

Engineering Contradiction:
Improvebonding strengthVSAvoidflow path cross-sectional shape
Core Design Contradiction:
StrengthVSShape

Solution Approach 1:

The patent changes the bonding parameters by using lower temperatures (below the glass transition temperature of the substrate) combined with surface activation. This alternative parameter combination achieves strong bonding without the high temperatures that would deform the flow path

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent performs preliminary surface activation (plasma treatment or UV irradiation) before bonding to enhance adhesion. This preliminary action allows subsequent bonding to proceed at lower temperatures, preventing flow path deformation while maintaining bonding strength

Inventive Principle:
Principle #10Preliminary action

3Reliability

If vacuum ultraviolet irradiation or plasma treatment is used to activate bonding surfaces, then bonding reliability is improved, but the process complexity increases

Engineering Contradiction:
Improvebonding reliabilityVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs atmospheric pressure plasma treatment that can be performed in ambient conditions without requiring vacuum systems. The plasma treatment self-activates the substrate surfaces in situ, eliminating the need for separate vacuum ultraviolet irradiation equipment and simplifying the overall process

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method achieves reliable high-adhesion bonding of substrates with warpage or undulation, enabling the production of large-sized microchips with consistent flow paths and multiple measurement structures.

Implementation Method 1

irradiating vacuum ultraviolet rays to each of the bonding surfaces of two substrates, or converting a process gas into plasma under atmospheric pressure or in the vicinity thereof and bringing the plasma-converted process gas into contact with the surface of the substrate, thereby activating the bonding surface of each substrate

Methodology Applied
Scientific EffectUltraviolet irradiation: Photo-oxidation

Implementation Method 2

a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating a stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate

Methodology Applied
Scientific EffectThermal deformation: Deformation

Data Source

PatentUS10487183B2Method of bonding substrates and method of producing microchip
Publication Date: 2019.11.26 USHIO INC
  • US10487183B2 patent drawing
  • US10487183B2 patent drawing
  • US10487183B2 patent drawing

AI summary

The present invention has as its object the provision of a method of bonding substrates, which can bond two substrates, at least one of which has warpage and undulation of a bonding surface, in a high adhesion state and a method of producing a microchip.In the method of bonding substrates according to the present invention, the first substrate is formed of a material having a deformable temperature at which the substrate deforms and which is higher than a deformable temperature of the second substrate, the method includes: a surface activation step of activating each of bonding surfaces of the first substrate and the second substrate; a stacking step of stacking the first substrate and the second substrate so that the respective bonding surfaces thereof are in contact with each other; and a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating the stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate and lower than the deformable temperature of the first substrate.