Substrate Bonding Under Vacuum Heat Activation for Stronger Interfaces
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Solution Overview
Problem
The existing bonding method faces challenges in achieving consistent bonding strength due to impurities on the substrate surfaces, as the removal of impurities with particle collision is inefficient and can result in surface roughening, leading to reduced bonding strength.
Innovation Solution
A bonding method involving a heat treatment process to heat the bonding surfaces above 60°C in a reduced-pressure atmosphere, followed by an activation treatment and bonding in the same atmosphere, to vaporize and remove impurities and enhance surface activation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If particles are used to collide with and remove impurities from the bonding surface, then impurity removal is achieved, but the bonding surface becomes rough and bonding strength is reduced
Solution Approach 1:
The invention changes the parameter of impurity removal from mechanical particle collision to thermal vaporization by heating the bonding surface to a specific temperature range (50°C to 200°C), which transforms the removal mechanism and prevents surface roughening while maintaining effective impurity elimination
Solution Approach 2:
The invention replaces the mechanical particle collision system with a thermal field system, substituting kinetic energy-based removal with heat-based vaporization, thereby achieving impurity removal without the harmful mechanical impact that causes surface roughening
2Reliability
If particle irradiation time is extended to ensure complete impurity removal, then impurity removal is improved, but bonding surface roughness increases
Solution Approach 1:
The invention changes the parameter of impurity removal from prolonged particle irradiation to controlled thermal heating at 50°C to 200°C, transforming the removal mechanism from kinetic impact to thermal vaporization, achieving complete impurity removal with controlled surface temperature and minimal surface roughening
Solution Approach 2:
The invention applies periodic thermal cycling by heating the bonding surface to a specific temperature range (50°C to 200°C) and then cooling it before bonding, which effectively removes impurities through repeated thermal expansion and contraction while maintaining surface smoothness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively increases the bonding strength by ensuring thorough removal of impurities and surface activation, leading to improved adhesion between substrates.
Implementation Method 1
a heat treatment process of heating at least one of bonding surfaces to be bonded to each other of the two bonded objects to a temperature higher than 60° C. in a reduced-pressure atmosphere
Data Source
AI summary
A bonding method for bonding two substrates (W1, W2) includes: a heat treatment process of heating a bonding surface to be bonded to each other of each of the two substrates (W1, W2) to a temperature higher than 60° C. in a reduced-pressure atmosphere; an activation treatment process of activating the bonding surface of each of the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the heat treatment process; and a bonding process of bonding the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the activation treatment process. In the heat treatment process, the state of heating the bonding surface of each of the two substrates (W1, W2) to a temperature higher than 60° C. may be maintained for 30 seconds or more in a state of maintaining the reduced-pressure atmosphere. The gas pressure in the heat treatment process may be 10−2 Pa or less.