Semiconductor Substrate Carbon Evaluation via Differential Carriers

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Solution Overview

Problem

The concentration of hydrogen donors formed by implanting hydrogen ions into a semiconductor substrate varies with the carbon concentration of the substrate, necessitating an easy and accurate method to evaluate the carbon concentration.

Innovation Solution

An evaluation method involving implanting hydrogen ions into a semiconductor substrate, annealing it, and measuring differential carrier concentrations to determine the carbon concentration based on correlation information, allowing for precise adjustment of implantation conditions to stabilize hydrogen donor concentrations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If hydrogen ions are implanted into a semiconductor substrate to form hydrogen donors, then the hydrogen donor concentration can be adjusted, but the concentration varies depending on the carbon concentration of the substrate making it difficult to control precisely

Engineering Contradiction:

Improvehydrogen donor concentration controlVSAvoidsubstrate carbon concentration variation

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The invention performs preliminary evaluation of the semiconductor substrate's carbon concentration before hydrogen ion implantation. By measuring the differential carrier concentration in advance and determining the carbon concentration based on this measurement, the process establishes a baseline that allows subsequent adjustment of implantation conditions to achieve the desired hydrogen donor concentration despite variations in substrate carbon content.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The invention changes the implantation conditions (such as ion dose, energy, or temperature) based on the evaluated carbon concentration of the substrate. This parameter adjustment ensures that the hydrogen donor concentration achieves the target value regardless of the substrate's carbon concentration variations, thereby resolving the contradiction between precise control and substrate variability.

Inventive Principle:

Principle #35Parameter changes

2Measurement precision

If the carbon concentration of the semiconductor substrate is evaluated using conventional methods, then the evaluation process is complex and time-consuming

Engineering Contradiction:

Improvecarbon concentration evaluation accuracyVSAvoidevaluation process time

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

The invention uses differential carrier concentration as an intermediary parameter to evaluate carbon concentration. Instead of directly measuring carbon concentration through complex analytical methods, the process measures the differential carrier concentration (the difference between carrier concentration in the hydrogen ion passage region and non-passage region), which correlates with carbon concentration. This intermediary measurement approach significantly reduces evaluation time while maintaining accuracy.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention replaces complex mechanical or chemical analysis methods for carbon concentration measurement with an electrical measurement approach. By using carrier concentration measurements (which can be performed quickly using electrical characterization techniques) to infer carbon concentration, the process achieves accurate evaluation without the time-consuming conventional methods.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables accurate evaluation of carbon concentration in semiconductor substrates, thereby stabilizing hydrogen donor concentrations and reducing variations, improving the manufacturing process of semiconductor devices.

Implementation Method 1

A technique for forming a hydrogen donor by implanting hydrogen ions into a semiconductor substrate is known

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

the semiconductor substrate may be annealed

Methodology Applied

Scientific EffectAnnealing: Annealing

Data Source

PatentEP4672899A1Method for evaluating semiconductor substrate and method for manufacturing semiconductor device

Publication Date: 2025.12.31 FUJI ELECTRIC CO LTD

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AI summary

Provided is an evaluation method of a semiconductor substrate, including: implanting hydrogen ions from an implantation surface of a semiconductor substrate containing silicon; annealing the semiconductor substrate; measuring a differential carrier concentration, which is a difference between a first carrier concentration in a passage region of the semiconductor substrate through which the hydrogen ions have passed and a second carrier concentration in a non-passage region of the semiconductor substrate where the hydrogen ions have not reached; and evaluating a carbon concentration in the semiconductor substrate, based on the differential carrier concentration.