Substrate Processing Chamber Recovery Through Dummy Sputtering
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Solution Overview
Problem
In substrate processing, when recovery processing time exceeds substrate processing time, existing methods result in waiting time due to overlapping recovery processes in multiple chambers, hindering throughput improvement.
Innovation Solution
Implement a method where recovery processing in one chamber is initiated when a predetermined number of substrates are processed, allowing simultaneous substrate transfer to the other chamber for continuous processing, and resuming alternate transfers once recovery is complete in both chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dummy sputtering processing is performed in both film forming chambers in parallel when the number of processed substrates reaches a predetermined number, then the state of both processing chambers is recovered, but the recovery processing time becomes longer than the substrate processing time, causing waiting time and reducing throughput
Solution Approach 1:
The patent applies preliminary action by performing dummy sputtering processing in only one film forming chamber when the number of processed substrates reaches a predetermined number, rather than waiting for both chambers to require recovery. This advance recovery action ensures that when the second chamber needs recovery, the first chamber is already ready, eliminating waiting time and maintaining continuous substrate processing throughput.
2Productivity
If the same processing is performed in parallel in two film forming chambers, then substrate processing efficiency is improved, but when recovery processing time exceeds substrate processing time, waiting time occurs and throughput improvement is hindered
Solution Approach 1:
The patent ensures continuity of useful action by implementing an asymmetric recovery strategy where dummy sputtering is performed in only one chamber at a time. This allows substrates to continuously flow through the system without interruption, as the other chamber remains available for processing while the first chamber recovers, eliminating idle waiting time and maintaining maximum productivity.
3Reliability
If dummy sputtering processing is performed in both film forming chambers overlapped with each other, then both chambers are recovered, but the processing is similar to having processing time interposed between lots, failing to shorten waiting time
Solution Approach 1:
The patent applies preliminary action by performing dummy sputtering processing in one chamber before the other chamber needs recovery. This timing strategy ensures that the first chamber is recovered and ready to accept substrates immediately when the second chamber finishes its batch, eliminating the waiting time that would otherwise occur between lots while still achieving complete recovery of both chambers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents duplicate recovery processing, enabling immediate substrate discharge after completion, thereby shortening waiting time and enhancing throughput by optimizing chamber utilization.
Implementation Method 1
dummy sputtering processing (so-called recovery processing)... Ti target is shielded by a shutter which prevents the sputtered particles of the target from getting scattered
Data Source
AI summary
There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.