Substrate Chamber Gas Injection for Edge Etch Uniformity
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Solution Overview
Problem
The etch rate and uniformity of substrates during plasma-based substrate treating processes vary depending on the position on the substrate, particularly as substrates become larger and patterns more complex, leading to issues with pattern collapse and plasma-induced damage.
Innovation Solution
A substrate treating apparatus and method that includes a support unit, process gas supply, a chamber unit with a first gas supply module, and a first gas exhaust hole to regulate the density of effluents, utilizing a hydrogen-containing gas to control the etch rate and uniformity by locally supplying the gas to the edge region of the substrate via the chamber unit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma-based substrate treating process is used for dry cleaning or dry etching, then pattern collapse and plasma-induced damage are reduced, but etch rate and uniformity vary depending on position on the substrate
Solution Approach 1:
The patent introduces a first gas supply module that supplies a first gas (different from the process gas) to specific regions of the substrate through first gas exhaust holes formed in the chamber unit. This creates local quality differences in gas composition and density across the substrate surface, allowing different regions (center vs. edge) to receive tailored gas environments that optimize etch rate and uniformity locally while maintaining the overall benefits of plasma-based processing
2Area of stationary object
If substrates become larger and patterns more complex, then manufacturing capability is enhanced, but etch rate and uniformity control becomes more difficult
Solution Approach 1:
The patent segments the gas supply system into multiple independent components: a process gas supply unit for overall processing and a first gas supply module for regional control. The chamber unit includes multiple first gas exhaust holes distributed across different regions, allowing independent control of gas flow to different substrate areas. This segmentation enables precise etch rate and uniformity control across large substrates with complex patterns
3Productivity
If effluent density from process gas is increased to improve etch rate, then processing speed increases, but uniformity across the substrate deteriorates
Solution Approach 1:
The patent introduces a first gas as an intermediary substance that mediates between the process gas and the substrate. The first gas, supplied through the first gas supply module and discharged through first gas exhaust holes, acts as a controlling intermediary that regulates effluent density and distribution. This intermediary gas enables high etch rates while maintaining uniformity by modulating the interaction between process gas effluents and the substrate surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etch rate in the edge region of the substrate is controlled, improving the overall uniformity of the substrate by preventing excessive etching and enhancing the consistency of the treatment process.
Implementation Method 1
the first gas includes a hydrogen-containing gas that generates a fluorine scavenging effect
Implementation Method 2
a substrate treating process using plasma may be employed
Implementation Method 3
Dry cleaning and dry etching are isotropic etching processes
Data Source
AI summary
A substrate treating apparatus includes: a support unit supporting a substrate; a process gas supply unit supplying a process gas for treating the substrate; a chamber unit in which a processing space accommodating the support unit is formed and into which the process gas is introduced; and a first gas supply module supplying a first gas for regulating the density of effluents from the process gas, wherein the chamber unit includes a first gas exhaust hole discharging the first gas toward the substrate.