Substrate Processing Chamber Layout for Gas Isolation and Exhaust Flow
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Solution Overview
Problem
In substrate processing for semiconductor devices, there is a challenge in preventing gas from flowing between the process chamber and the transfer chamber, leading to inefficiencies and contamination.
Innovation Solution
The implementation of a substrate processing apparatus with a process container, substrate mounting tables, gas suppliers, first and second walls, exhaust flow paths, and a shield plate to create a labyrinthine gas flow path that suppresses gas flow between the chambers, maintaining high internal pressure in the process chamber and low pressure in the exhaust flow path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a simple chamber configuration is used, then device complexity is reduced, but gas flows freely between process chamber and transfer chamber causing contamination and pressure loss
Solution Approach 1:
The chamber structure is segmented into multiple walls (first wall, second wall) and a shield plate that divides the space between process chamber and transfer chamber into distinct regions. This segmentation creates separate flow paths for process gas and exhaust gas, preventing direct mixing while maintaining structural organization.
Solution Approach 2:
The shield plate acts as an intermediary element positioned between the process chamber and transfer chamber. It blocks direct gas flow between chambers while allowing exhaust gas to be directed through designated exhaust flow paths to the exhaust port, mediating the interaction between the two chambers.
2Productivity
If exhaust flow path is formed between first wall and second wall, then gas discharge efficiency is improved, but device complexity increases due to multiple walls and shield plate
Solution Approach 1:
The first wall, second wall, and shield plate structure serves multiple functions simultaneously: it defines the exhaust flow path for efficient gas discharge, acts as a barrier to prevent process gas from reaching the transfer chamber, and provides structural support for mounting the substrate processing apparatus components.
Solution Approach 2:
The exhaust flow path is created by extending the structure in the vertical dimension with the shield plate positioned below the substrate mounting table. This three-dimensional arrangement allows exhaust gas to flow downward and outward through the exhaust port while maintaining separation from the process chamber volume.
3Object-affected harmful factors
If shield plate extends to lower side of second wall, then gas flow suppression between chambers is improved, but device complexity increases
Solution Approach 1:
The harmful gas flow path between chambers is extracted and redirected through designated exhaust flow paths. The shield plate configuration specifically targets and removes the direct gas flow route by creating a physical barrier that forces gas to follow controlled exhaust paths to the exhaust port.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents gas from flowing between the process and transfer chambers, ensuring efficient gas discharge and maintaining high pressure in the process chamber, thereby enhancing substrate processing uniformity and preventing contamination.
Implementation Method 1
maintaining high internal pressure in the process chamber and low pressure in the exhaust flow path
Data Source
AI summary
A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.