Substrate Chamber Purging to Prevent Gas Phase Change Defects

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The generation of foreign substances due to phase change of hydrogen and oxygen-containing gases, such as water vapor, during low-temperature film formation or modification processes in semiconductor manufacturing, leading to film peeling and contamination.

Innovation Solution

A method involving same-pressure nitrogen purging followed by vacuuming to maintain gases in a gaseous state and prevent phase change, reducing foreign substance generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If vacuuming is performed immediately after supplying hydrogen and oxygen-containing gas, then processing efficiency is improved, but foreign substances are generated due to phase change of the gas

Engineering Contradiction:

Improveprocessing efficiencyVSAvoidforeign substance generation

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies preliminary action by performing a purging step before vacuuming to remove hydrogen and oxygen-containing gas from the process chamber. This preliminary removal prevents the gas from undergoing phase change during subsequent vacuuming, thereby eliminating foreign substance generation while maintaining processing efficiency. The purging step ensures that when vacuuming occurs, no condensable gas remains to form foreign substances on the film surface.

Inventive Principle:

Principle #10Preliminary action

2Loss of time

If pressure is reduced directly after gas supply, then process time is shortened, but film peeling occurs due to gas phase change

Engineering Contradiction:

Improveprocess timeVSAvoidfilm adhesion

Core Design Contradiction:

Loss of timeVSStrength

Solution Approach 1:

The patent applies preliminary action by performing a purging step before pressure reduction to remove condensable gas from the process chamber. This preliminary removal prevents the gas from condensing on the film surface during pressure reduction, thereby preventing film peeling while maintaining short process time. The purging ensures that when pressure is reduced, no gas phase change occurs to compromise film adhesion.

Inventive Principle:

Principle #10Preliminary action

3Manufacturing precision

If hydrogen and oxygen-containing gas is supplied for film modification, then film quality is improved, but foreign substances are generated during subsequent vacuuming

Engineering Contradiction:

Improvefilm qualityVSAvoidforeign substance generation

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies the extraction principle by removing hydrogen and oxygen-containing gas from the process chamber through a purging step before vacuuming. This extraction of the problematic gas prevents it from undergoing phase change and forming foreign substances on the film surface. The useful film modification effect is retained while the harmful foreign substance generation is eliminated by extracting the condensable gas beforehand.

Inventive Principle:

Principle #2Taking out (Extraction)

4Productivity

If rapid pressure reduction is performed, then throughput is increased, but condensation of gas occurs causing contamination

Engineering Contradiction:

ImprovethroughputVSAvoidcontamination

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by performing a purging step before rapid pressure reduction to remove condensable gas from the process chamber. This preliminary removal ensures that when rapid pressure reduction occurs, no gas is present to condense and cause contamination. The throughput is maintained through rapid pressure reduction while contamination is prevented by the prior extraction of condensable gas.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Suppresses film peeling and foreign substance generation, enhances process control and throughput by maintaining gas phase stability during film formation and modification.

Implementation Method 1

purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber

Methodology Applied

Scientific EffectGas displacement:

Implementation Method 2

vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure

Methodology Applied

Scientific EffectPressure reduction: Depressurisation

Data Source

PatentUS12359314B2Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

Publication Date: 2025.07.15 KOKUSAI DENKI KK

AI summary

There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.