Substrate Chamber Gas Zoning for Uniform Wafer Processing
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Solution Overview
Problem
Existing substrate processing apparatuses face issues with gas flow disturbance and non-uniform processing due to the substrate entrance formed in the process chamber, leading to heat loss and process uniformity deterioration.
Innovation Solution
A substrate processing apparatus with a first and second gas supply system, controlled by a controller, to manage gas flow through the substrate entrance passage, using a shutter and opening and closing door to isolate and adjust gas flow rates and compositions independently in the processing space and entrance passage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a substrate entrance is formed in the process chamber for substrate transfer, then substrate transfer between chambers is enabled, but gas flow disturbance occurs leading to process uniformity deterioration
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply units, each controlling gas flow to specific regions of the process chamber. This allows independent adjustment of gas flow in different zones to compensate for disturbances caused by the substrate entrance, thereby maintaining process uniformity while enabling substrate transfer.
Solution Approach 2:
Different regions of the process chamber are provided with different gas flow conditions through dedicated gas supply units. The gas flow rate and composition can be locally adjusted based on the specific requirements of each region, particularly compensating for the gas flow disturbance caused by the substrate entrance location.
2Manufacturing precision
If a shutter is used to block the substrate entrance, then gas flow disturbance is reduced, but it is difficult to completely block gas flow
Solution Approach 1:
Instead of relying solely on mechanical shutter blocking, the patent uses pneumatic control through gas supply units to actively manage gas flow. By controlling gas pressure and flow rate, the system can effectively seal off the substrate entrance region, achieving complete gas flow blocking that mechanical shutters alone cannot provide.
3Manufacturing precision
If a dummy opening is formed in addition to the substrate entrance, then process uniformity is improved, but device complexity increases
Solution Approach 1:
The gas supply units are designed to serve multiple functions: they provide process gas for substrate processing, control gas flow distribution, and compensate for disturbances caused by the substrate entrance. This multi-functionality allows the system to achieve process uniformity without adding dummy openings or other structural modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively minimizes gas flow disturbance and ensures uniform processing by adjusting gas flow and pressure conditions, enhancing process uniformity across the substrate surface.
Implementation Method 1
a first gas supply unit configured to supply a first gas to the processing space
Implementation Method 2
a second gas supply unit configured to supply a second gas to a substrate entrance passage that is a space inside the connection part
Implementation Method 3
a controller configured to control the first gas supply unit and the second gas supply unit
Data Source
AI summary
Proposed is a substrate processing apparatus. The substrate processing apparatus includes a process chamber having an inner portion provided with a processing space for performing substrate processing, a transfer chamber including a transfer robot for transferring a substrate to the process chamber and being connected to the process chamber by a connection part, a first gas supply unit configured to supply a first gas to the inner portion of the process chamber, a second gas supply unit configured to supply a second gas to a substrate entrance passage that is a space inside the connection part, and a controller configured to control the first and second gas supply units. According to the substrate processing apparatus of the present disclosure, there is an effect that a problem of gas flow disturbance within a process chamber caused by a substrate entrance is capable of being solved.