Substrate Accommodation Chamber Inert Gas Atmosphere Control
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Solution Overview
Problem
Conventional substrate processing apparatuses expose processed substrates to the atmosphere for extended periods, leading to undesired reactions with moisture, which can result in corrosion of materials like copper wiring during plasma etching, as the atmosphere is purged with inert gas while the front opening is fully open, and similarly during substrate storage.
Innovation Solution
A substrate processing apparatus with a vertically movable gate and a gas supply unit that maintains a nitrogen gas atmosphere within the substrate accommodation chamber, preventing exposure to atmospheric moisture and allowing direct transfer of processed substrates back to the carrier without passing through the substrate accommodation chamber, thereby minimizing reaction risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the front opening of the FOUP is fully opened during processing of substrates, then the atmosphere can be introduced into the FOUP through the front opening, but the processed substrates are exposed to the atmosphere for a long period of time and may undesirably react with moisture in the atmosphere
Solution Approach 1:
The FOUP front opening is divided into two independent openings: a first opening for introducing atmosphere and a second opening for substrate transfer. This segmentation allows atmosphere introduction while minimizing substrate exposure time to atmospheric moisture, resolving the contradiction between ease of operation and protection from harmful factors.
2Adaptability or versatility
If processed substrates are accommodated in a storage with exposure to atmosphere, then the substrates can be stored, but they may undesirably react with moisture in the atmosphere
Solution Approach 1:
The substrate storage unit is filled with inert gas (nitrogen or rare gas) to create an inert atmosphere that prevents processed substrates from reacting with atmospheric moisture during storage, while still allowing versatile substrate accommodation functionality.
3Reliability
If a purge mechanism is used to replace the atmosphere in the FOUP with inert gas, then the atmosphere can be purged, but the front opening must be fully opened which exposes substrates to atmosphere for extended periods
Solution Approach 1:
The FOUP front opening is segmented into two separate openings that can operate independently: one for atmosphere introduction/purging and another for substrate transfer. This allows atmosphere replacement to occur without requiring the full opening to be open, thereby reducing substrate exposure time while maintaining reliable atmosphere replacement functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents corrosion of substrates by maintaining a controlled inert gas atmosphere, reducing the risk of hydrofluoric acid generation and ensuring the integrity of copper wiring during processing and storage.
Implementation Method 1
a gas supply unit for supplying a gas into the substrate accommodation chamber
Data Source
AI summary
A substrate processing apparatus includes a processing unit performing a predetermined processing on a substrate; a transfer chamber; and a substrate accommodation unit including a substrate accommodation chamber communicating with the transfer chamber via a transfer opening, a gate provided at the transfer opening to separate the substrate accommodation chamber from the transfer chamber, and a gas supply unit supplying a gas into the substrate accommodation chamber. The substrate accommodation chamber accommodates therein substrates that have been processed by the processing unit, and the gas supply unit provides a gas flow suppressing an atmosphere of the transfer chamber from being introduced into the substrate accommodation chamber, thereby preventing undesired reaction between moisture in the atmosphere of the transfer chamber and deposits adhered on the processed substrates accommodated in the substrate accommodation chamber.