Substrate Cleaning Composition for Deep Trench Particle Removal
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Solution Overview
Problem
Current substrate cleaning processes for semiconductor devices face challenges in effectively removing nano-scale particles and organic residues from deep trenches without causing pattern collapse or damaging silicon-based layers, particularly due to high surface tension of conventional solvents and water-based chemical solutions.
Innovation Solution
A substrate cleaning composition using an organic solvent with a Hansen solubility parameter of 5 to 12 for polystyrene latex, combined with a binder containing phosphorus, and an etching compound, applied in an anhydrous form, is used, followed by a supercritical fluid drying process to prevent pattern collapse and efficiently remove nano-scale particles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional water-based chemical solutions or organic solvents with high surface tension are used for cleaning, then cleaning process is simple, but nano-scale particles and organic residues in deep trenches cannot be effectively removed
Solution Approach 1:
The patent changes the surface tension parameter of the cleaning solution by using anhydrous organic solvents (isopropyl alcohol, n-butyl acetate, diethyl malonate) with specifically controlled surface tension values (20-35 dyn/cm) instead of conventional water-based solutions. This parameter change enables effective penetration into deep trenches and removal of nano-scale particles while maintaining processability
Solution Approach 2:
The patent creates a composite cleaning composition by combining multiple organic solvents with complementary properties: isopropyl alcohol (low surface tension for penetration), n-butyl acetate (good solubility for organic residues), and diethyl malonate (enhanced trench cleaning capability). This composite formulation achieves superior cleaning performance that individual solvents cannot provide alone
2Manufacturing precision
If organic solvents with low surface tension are used to remove particles, then particle removal efficiency is improved, but pattern collapse occurs on fine circuit patterns
Solution Approach 1:
The patent optimizes the surface tension parameter to a specific range (20-35 dyn/cm) that balances two competing requirements: low enough to enable penetration into deep trenches and effective particle removal, but not so low as to cause pattern collapse. This precise parameter control resolves the contradiction between cleaning efficiency and pattern integrity
Solution Approach 2:
The cleaning composition exhibits different effective properties at different locations: the optimized surface tension enables deep penetration and particle removal in trench regions, while the anhydrous formulation and solvent combination provide gentle action on pattern structures, preventing collapse. The binder and etching compound further enhance localized cleaning in deep regions without affecting pattern areas
3Manufacturing precision
If conventional cleaning processes are used, then process simplicity is maintained, but organic residues in deep trenches remain
Solution Approach 1:
The patent changes the chemical composition parameters by eliminating water and using specific organic solvents with optimized solubility parameters. This enables effective dissolution and removal of organic residues in deep trenches that water-based solutions cannot access or dissolve effectively
Solution Approach 2:
The patent replaces mechanical agitation or prolonged cleaning time with chemically optimized solvents that actively dissolve organic residues. The anhydrous organic solvent system provides enhanced solubility and penetration, achieving thorough residue removal through chemical action rather than relying on extended process time
4Manufacturing precision
If anhydrous organic solvent composition is used for cleaning, then pattern collapse is prevented and nano-scale particles are removed, but additional process steps are required
Solution Approach 1:
The anhydrous organic solvent composition performs multiple functions simultaneously: it penetrates deep trenches, removes nano-scale particles, dissolves organic residues, and prevents pattern collapse—all in a single cleaning step. This multi-functionality reduces the need for multiple sequential cleaning processes despite the specialized formulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances cleaning efficiency, prevents pattern collapse, and effectively removes nano-scale particles and organic residues from deep trenches without damaging silicon-based layers, as demonstrated by high particle removal performance and minimal substrate damage.
Implementation Method 1
a cleaning composition including an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex
Implementation Method 2
supplying a supercritical fluid to the substrate to which the cleaning composition is applied to process the substrate
Data Source
AI summary
A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.