Substrate Processing Apparatus Cleaning Control via Segmented Gas Flow
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Solution Overview
Problem
Conventional substrate processing apparatuses face challenges in efficiently cleaning the inside of process chambers and gas supply nozzles due to the formation of films with different qualities and thicknesses, leading to increased cleaning time, contamination, and damage to equipment.
Innovation Solution
A substrate processing apparatus with a controller that manages the supply of cleaning gases through multiple gas introducing parts, adjusting conditions based on accumulated supply time and film thickness to efficiently remove deposition substances from the process chamber and gas supply nozzles, optimizing cleaning processes for each component.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a cleaning gas is supplied to the process chamber to remove deposited substances, then the contamination is removed, but the cleaning time increases and equipment damage occurs
Solution Approach 1:
The invention divides the cleaning process into two distinct segments: (1) cleaning the gas supply nozzle by controlling the cleaning gas flow rate to be higher than the process gas flow rate, and (2) cleaning the process chamber by controlling the cleaning gas flow rate to be lower than the process gas flow rate. This segmentation allows each cleaning operation to be optimized independently, reducing overall cleaning time while preventing equipment damage
Solution Approach 2:
The invention applies different cleaning conditions to different locations: the gas supply nozzle receives a higher cleaning gas flow rate to remove thick deposits, while the process chamber receives a lower cleaning gas flow rate to avoid damage to the reaction tube. This localized quality adjustment resolves the contradiction by tailoring cleaning intensity to the specific needs of each component
2Object-affected harmful factors
If a cleaning gas is supplied to remove deposited substances, then the contamination is removed, but equipment damage occurs
Solution Approach 1:
The cleaning process is segmented into two phases with different flow rate controls: high flow rate for nozzle cleaning and low flow rate for chamber cleaning. This prevents the reaction tube from being exposed to excessively high cleaning gas flow rates that would cause damage, while still effectively removing contamination from both locations
Solution Approach 2:
Different cleaning intensities are applied to different locations based on their specific requirements. The gas supply nozzle, which accumulates thick deposits, receives high cleaning gas flow rate, while the process chamber and reaction tube receive lower flow rates to prevent damage. This localized approach removes contamination effectively while protecting equipment integrity
3Productivity
If the cleaning gas flow rate is increased to reduce cleaning time, then cleaning efficiency improves, but equipment damage occurs
Solution Approach 1:
The cleaning operation is divided into two sequential steps with different flow rate settings: Step 1 uses high cleaning gas flow rate for nozzle cleaning, and Step 2 uses low cleaning gas flow rate for chamber cleaning. This segmentation maintains high cleaning efficiency for the nozzle while protecting the reaction tube from damage during chamber cleaning
Solution Approach 2:
The invention applies different cleaning gas flow rates to different locations: high flow rate to the gas supply nozzle where thick deposits accumulate, and low flow rate to the process chamber to prevent reaction tube damage. This local quality differentiation achieves both high cleaning efficiency and equipment protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient cleaning with reduced contamination and damage, shorter cleaning times, and improved gas consumption efficiency, effectively addressing the challenges of film formation and equipment maintenance.
Implementation Method 1
a cleaning gas is also supplied to the inside of the process chamber (particularly, parts where it is expected that substances are attached) so as to remove substances attached to the inside of the process chamber by converting the substances into harmless gas
Implementation Method 2
a silicon film may be formed, due to decomposition of the silicon source, on the inner wall of a first nozzle
Implementation Method 3
By using a silicon source and a nitriding source as process gases, a silicon nitride film can be formed on the surface of a substrate
Data Source
AI summary
A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.