Substrate Cleaning via Partial Etching to Expose Embedded Particles
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Solution Overview
Problem
Fine patterns on substrates are prone to damage during physical cleaning, limiting the range of physical force that can be applied for effective particle removal without causing pattern damage, resulting in a narrow process window that makes it difficult to achieve both efficient particle removal and pattern protection.
Innovation Solution
A substrate cleaning method involving partial etching of the oxide film to expose particles, followed by physical cleaning with reduced energy, using techniques like two-fluid cleaning, ultrasonic cleaning, or inkjet cleaning, to remove particles while minimizing pattern damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical cleaning with high kinetic energy is applied to remove particles, then particle removal performance is improved, but pattern damage occurs
Solution Approach 1:
The oxide film is partially etched before physical cleaning to expose particles embedded within it. This preliminary action makes particles more accessible to the cleaning fluid, allowing effective removal with lower kinetic energy and thus preventing pattern damage while maintaining particle removal performance
2Productivity
If physical force is increased to remove particles embedded in oxide film, then particle removal performance is improved, but the process window becomes narrower
Solution Approach 1:
Partial etching of the oxide film is performed before physical cleaning to expose particles. This preliminary action expands the process window by enabling effective particle removal with a broader range of physical cleaning conditions, as particles are no longer buried deep within the oxide film
Solution Approach 2:
The etching is applied selectively to the oxide film regions containing particles, rather than uniformly removing the entire oxide film. This localized approach maintains the oxide film's protective function while exposing particles for removal, thereby widening the acceptable process window
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for efficient particle removal with reduced energy, effectively widening the process window and preventing pattern damage by selectively exposing particles through partial etching and using controlled physical cleaning methods.
Implementation Method 1
a partial etching step of etching the oxide film to a predetermined film thickness
Implementation Method 2
Droplets in the mixed fluid collide with the surface of the substrate, and the impact causes particles on the surface of the substrate to be separated and thereby removed from the substrate
Implementation Method 3
Specific examples of physical cleaning include ultrasonic cleaning
Data Source
AI summary
Provided is a substrate cleaning method for cleaning a substrate having an oxide film on the surface thereof. The method includes a partial etching step of etching the oxide film to a predetermined film thickness, and a physical cleaning step of executing physical cleaning on the surface of the substrate after the partial etching step. The oxide film may be a natural oxide film with particles at least partially taken into the film. In this case, the partial etching step may either expose the particles from the natural oxide film or increase the exposed portion from the natural oxide film. The physical cleaning may remove, by physical action, the particles exposed from the natural oxide film while leaving the natural oxide film on the surface of the substrate.