Substrate Cleaning Method Using Segmented Plasma Steps
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Solution Overview
Problem
Existing methods for cleaning process chambers during magnetic recording medium manufacturing fail to effectively remove multiple types of depositions, leading to variations in etching rates and particle generation due to residual materials.
Innovation Solution
A method involving three distinct cleaning steps using specific gases: a hydrogen-containing gas for removing carbon-containing depositions, an inert gas for removing metal-containing depositions, and a fluorine- and oxygen-containing gas for removing silicon-containing depositions, all utilizing plasma generated within the process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a same gas is used for cleaning multiple types of depositions, then the cleaning process is simple, but some depositions remain and cause etching rate variation and particle generation
Solution Approach 1:
The cleaning process is divided into three separate cleaning steps, each using a different gas specifically targeted at removing a particular type of deposition: hydrogen-containing gas for carbon-containing deposition, inert gas for metal-containing deposition, and fluorine-containing gas for silicon-containing deposition. This segmentation ensures complete removal of all deposition types without cross-contamination or incomplete cleaning.
Solution Approach 2:
The invention changes the chemical composition parameter of the cleaning gas in each step to match the specific chemical nature of the target deposition. By selecting gases with different chemical properties (hydrogen-rich, inert, fluorine-rich), the process optimizes removal efficiency for each deposition type while maintaining overall process reliability.
2Ease of operation
If a same gas is used for cleaning multiple types of depositions, then the cleaning procedure is straightforward, but residual materials remain causing particle generation
Solution Approach 1:
The cleaning operation is segmented into three distinct steps, each targeting a specific deposition type with a specialized gas. This prevents residual materials from any single deposition type from remaining in the chamber, thereby eliminating the source of particle generation during subsequent processing.
Solution Approach 2:
The invention converts the harmful effect of multiple deposition types by using their specific chemical characteristics to select appropriate cleaning gases. Each deposition type's chemical composition becomes the basis for selecting the optimal removing agent, transforming the diversity of depositions from a cleaning challenge into a systematic solution.
3Productivity
If a same gas is used for cleaning multiple types of depositions, then the process is uniform, but cleaning effectiveness decreases for certain deposition types
Solution Approach 1:
The chemical composition of the cleaning gas is changed in each step to match the target deposition: hydrogen-containing gas (high hydrogen concentration) for carbon-containing deposition, inert gas for metal-containing deposition, and fluorine-containing gas for silicon-containing deposition. This parameter optimization ensures maximum removal efficiency and complete cleaning for each deposition type.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient removal of various depositions, stabilizing etching rates, suppressing particle generation, and extending the lifespan of process chamber components by ensuring each type of deposition is removed separately.
Implementation Method 1
removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas
Implementation Method 2
removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas
Implementation Method 3
removing a metal-containing deposition by plasma generated from the inert gas
Implementation Method 4
removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas
Implementation Method 5
removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas
Data Source
AI summary
A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.