Substrate Connection Structure With Seed-Layer Filling of Deep Openings

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Solution Overview

Problem

Current methods for manufacturing semiconductor devices face challenges in creating effective connection structures between substrates, particularly in ensuring reliable electrical connections and uniform filling of conductive materials in deep openings, which can lead to inefficiencies and defects.

Innovation Solution

A method involving forming openings in a substrate, applying a galvanic seed layer on a carrier substrate, connecting the substrates with the seed layer in between, and galvanically depositing a conductive material that fills the openings, while ensuring exposure of the seed layer to prevent incomplete filling and using insulation layers for electrical insulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional methods are used to form connection structures in deep openings, then electrical connections can be established, but the conductive material filling is incomplete and unreliable

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidconductive material filling completeness

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

A galvanic seed layer is formed on the carrier substrate before the actual conductive material deposition. This preliminary layer serves as a foundation that ensures complete and uniform filling of the opening, preventing incomplete filling and improving the reliability of the electrical connection.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The galvanic seed layer acts as an intermediary between the carrier substrate and the final conductive material. It facilitates the galvanic deposition process and ensures that the conductive material fills the opening completely and uniformly, resolving the filling completeness issue.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Length of moving object

If the opening depth is increased to accommodate functional requirements, then electrical connection capability is improved, but the filling of conductive material becomes incomplete and defect-prone

Engineering Contradiction:

Improveopening depthVSAvoidconductive material filling uniformity

Core Design Contradiction:

Length of moving objectVSManufacturing precision

Solution Approach 1:

The galvanic seed layer is prepared in advance on the carrier substrate, creating a controlled foundation that enables uniform conductive material deposition even in deep openings. This preliminary preparation ensures that the conductive material fills the entire depth uniformly without defects.

Inventive Principle:

Principle #10Preliminary action

3Device complexity

If the galvanic process is simplified to reduce operational complexity, then manufacturing efficiency is improved, but the control over complete filling and defect prevention is reduced

Engineering Contradiction:

Improvegalvanic process complexityVSAvoidconnection structure quality

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The galvanic seed layer is formed as a preliminary step that simplifies the subsequent galvanic process. By preparing this foundation in advance, the actual conductive material deposition becomes more controlled and reliable, reducing defects while maintaining process simplicity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The galvanic seed layer serves as an intermediary that mediates between the simple galvanic deposition process and the requirement for high-quality complete filling. It enables the use of a relatively simple galvanic process while ensuring reliable and defect-free connection structures.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of reliable electrical connections, complete filling of conductive materials in deep openings, and simplifies the galvanic process, reducing defects and operational complexity, while allowing for the use of materials like nickel or aluminum.

Implementation Method 1

forming a galvanic seed layer over a first main surface of a carrier substrate

Methodology Applied

Scientific EffectGalvanic deposition: Electrodeposition

Implementation Method 2

galvanically forming a conductive material over the galvanic seed layer

Methodology Applied

Scientific EffectGalvanic deposition: Electrodeposition

Data Source

PatentUS12119236B2Method for producing a connection structure and semiconductor device

Publication Date: 2024.10.15 OSRAM OPTO SEMICON GMBH & CO OHG

AI summary

A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.