Substrate Contact Trench for Thin Film Resistor Thermal Management
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Solution Overview
Problem
Thin film resistors on silicon-on-insulator (SOI) substrates face heat accumulation issues due to low thermal conductivity, leading to vulnerability in metallization wiring and resistance value alterations, which limits current density in high-performance circuits.
Innovation Solution
A semiconductor structure with a substrate contact trench filled with a high thermal conductivity material, electrically insulated from the resistor, provides a low thermal resistance heat path to the substrate, enhancing cooling and allowing increased current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If current density is increased for high-performance circuits, then circuit performance is improved, but heat accumulation increases causing metallization failure and resistor instability
Solution Approach 1:
The patent introduces a substrate contact structure as an intermediary thermal management component. This contact provides a dedicated low-thermal-resistance pathway from the resistor to the substrate, acting as a heat sink that actively removes heat generated by high current density operation, thereby enabling high-performance circuits without thermal damage
Solution Approach 2:
The patent addresses thermal management by transitioning from two-dimensional in-plane heat dissipation to three-dimensional vertical heat conduction. The substrate contact extends heat flow paths vertically into the substrate, creating additional thermal conduction dimensions that efficiently remove heat from the resistor region
2Reliability
If current density is limited to protect metallization, then reliability is improved, but circuit performance deteriorates
Solution Approach 1:
The substrate contact serves as a thermal intermediary that decouples the thermal management function from the electrical circuit operation. By providing dedicated heat evacuation pathways, it allows high current densities to flow through the resistor without compromising metallization reliability, as the heat is actively removed before causing damage
3Volume of moving object
If film thickness is reduced for miniaturization, then device size is reduced, but current density increases causing more heat generation
Solution Approach 1:
The patent compensates for reduced in-plane heat dissipation capacity in miniaturized devices by introducing vertical heat conduction pathways through substrate contacts. This dimensional transition allows efficient heat removal from small, thin-film resistors that would otherwise generate excessive heat due to their reduced size and associated higher current densities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively reduces resistor temperature, enabling higher current densities while protecting metallization and maintaining resistor stability by efficiently dissipating heat through the substrate contact.
Implementation Method 1
a core composed of a high thermal conductivity material... provides a low thermal resistance heat path to the substrate... efficiently dissipating heat through the substrate contact
Implementation Method 2
a liner composed of electrical insulator material... electrically insulates the resistor from the core
Data Source
AI summary
A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate and forming a trench in the resistor and into the substrate. The method also includes forming a liner on sidewalls of the trench and forming a core comprising a high thermal conductivity material in the trench and on the liner.