Substrate Container Dry Gas Purge for Moisture Control
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Solution Overview
Problem
Existing methods for purging substrate containers in semiconductor manufacturing fail to maintain a low-humidity environment, leading to particle adhesion and unnecessary etching of wafers post-plasma etching, which contaminates other wafers and affects product yield.
Innovation Solution
A method involving the continuous supply of dry gas into the substrate container before and after opening/closing the cover, maintaining a dry atmosphere by controlling gas flow rates and distribution within the container to prevent moisture reactions with gases discharged from etched wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate container is opened to exchange wafers, then wafer processing efficiency is improved, but moisture enters the container causing particle generation and unnecessary etching
Solution Approach 1:
Dry gas is supplied into the substrate container before the cover is opened to maintain a dry atmosphere. This preliminary action ensures that when the cover is opened for wafer exchange, the container interior remains protected from moisture contamination, preventing particle generation and unnecessary etching of wafers.
Solution Approach 2:
A dry gas atmosphere (inert environment) is maintained within the substrate container by continuous supply of dry gas before, during, and after cover opening. This inert atmosphere prevents moisture from entering and reacting with gases discharged from etched wafers, thereby preventing particle adhesion and unwanted etching reactions.
2Object-affected harmful factors
If dry gas is supplied continuously to maintain low humidity, then particle generation is prevented, but gas consumption increases
Solution Approach 1:
Dry gas supply is started before the cover is opened and continued during cover opening. This timing strategy ensures particle prevention during the critical exposure period while minimizing unnecessary gas consumption during periods when the container is sealed and no contamination risk exists.
Solution Approach 2:
The dry gas supply operates periodically based on the cover opening/closing cycle rather than continuously. Gas is supplied during critical periods (before opening, during opening, and briefly after closing) and stopped during stable sealed periods, balancing particle prevention with gas consumption reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively maintains a low-humidity state within the substrate container, preventing particle generation and unnecessary etching, thus ensuring the cleanliness and integrity of wafers throughout the processing stages.
Implementation Method 1
it is preferable to maintain humidity in the substrate container in a low level in order to prevent gas discharged from the wafer after the plasma etching process from reacting with moisture in the substrate container
Data Source
AI summary
A method for purging a substrate container which accommodates in multiple stages a plurality of substrates to be processed by a substrate processing apparatus, the method includes: mounting the substrate container on a mounting unit; connecting a gas supply port provided in the substrate container and a gas supply line provided in a mounting unit; starting supply of a dry gas into the substrate container from a gas supply line before opening a cover of the substrate container; opening the cover of the substrate container while keeping the supply of the dry gas; closing the cover of the substrate container upon completion of processing of the substrates in the substrate container; and stopping the supply of the dry gas after closing the cover of the substrate container.