Substrate Contamination Analysis System for Film and Surface Impurity Separation
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Solution Overview
Problem
Existing substrate contamination analysis systems cannot individually analyze impurities present in a film and those on the surface of the film, leading to difficulties in accurately determining contaminants on semiconductor substrates with films like SiO2.
Innovation Solution
A substrate contamination analysis system comprising a vapor phase decomposition device to dissolve films, a recovery device to move objects to specific measurement positions, and a total reflection X-ray fluorescence spectrometer to analyze impurities, allowing for separate analysis of surface and film-borne impurities using different solvents and positions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If substrate wafers are exposed to air during manufacturing processes, then handling and processing become simpler, but particle contamination and oxidation of the substrate surface occur
Solution Approach 1:
The patent introduces an intermediary atmosphere (nitrogen or other inert gases) between the substrate and air to prevent direct contact with harmful elements. The chamber maintains a controlled atmosphere that acts as a mediator, allowing substrate handling and processing while preventing oxidation and particle contamination through the protective gas environment.
2Productivity
If multiple substrate wafers are processed simultaneously in a single chamber, then productivity increases, but cross-contamination between wafers may occur
Solution Approach 1:
The patent divides the processing chamber into multiple isolated zones or stations, each capable of handling substrates independently. This segmentation allows multiple wafers to be processed simultaneously in different sections while preventing cross-contamination through physical separation and controlled atmospheric boundaries between zones.
Solution Approach 2:
The controlled atmosphere system acts as an intermediary barrier between different substrate processing zones. By maintaining distinct atmospheric conditions in different chamber sections and using gas flows as protective barriers, the system enables high throughput while preventing cross-contamination through the mediating gas environment.
3Device complexity
If substrate wafers are handled in air, then no special atmosphere control is needed, but particles settle on the substrate surface causing defects
Solution Approach 1:
The patent implements an inert atmosphere environment using nitrogen or other inert gases to replace air in the processing chamber. This inert environment prevents particle settlement on substrate surfaces by eliminating air currents and particulate matter, thereby maintaining high manufacturing precision while requiring atmosphere control systems.
4Loss of time
If the substrate surface is exposed to air, then processing steps can be performed quickly, but oxidation occurs affecting subsequent processing
Solution Approach 1:
The patent maintains a continuous inert atmosphere throughout the substrate processing sequence, eliminating the need for time-consuming atmosphere transitions. This allows rapid processing steps to be performed while the inert gas environment continuously prevents oxidation, maintaining substrate surface integrity without time losses.
Solution Approach 2:
The patent ensures continuous protection of the substrate surface through an uninterrupted inert atmosphere throughout all processing steps. This continuous protective action eliminates gaps where oxidation could occur, allowing rapid sequential processing while maintaining constant substrate surface integrity protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables individual analysis of impurities in the film and on the surface, reducing analysis time and reprocessing efforts, while preventing liquid droplet residue on the substrate.
Implementation Method 1
an optical detection system that uses light to detect particles on a surface of the substrate
Data Source
Figure 1(a)~1(b)
Figure 2(a)~2(b)
Figure 3(a)~3(b)
AI summary
Provided is a substrate contamination analysis system capable of individually analyzing impurities present in a film and impurities present on a surface of the film. The substrate contamination analysis system includes: a vapor phase decomposition device configured to expose a film formed on a surface of a first substrate to a gas that reacts with the film, to thereby dissolve the film; a recovery device configured to perform a first recovery operation of moving an object to be measured to a first measurement position before the film is dissolved and a second recovery operation of moving the object to be measured to a second measurement position after the film is dissolved; and an analyzer configured to analyze the object to be measured every time the recovery device performs the first recovery operation and the second recovery operation.