Substrate Processing Apparatus Cooling Gas Injector
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Solution Overview
Problem
Existing substrate processing technologies face challenges in efficiently controlling substrate temperature during film formation and etching processes, leading to suboptimal film thickness control and reaction rates, particularly in atomic layer deposition (ALD) cycles.
Innovation Solution
A substrate processing apparatus equipped with a processing container, gas supply system, plasma generation mechanism, exhaust system, heating mechanism, and cooling gas injection unit, which allows precise temperature control of substrates by alternating between heating and cooling to maintain optimal temperatures for ALD cycles, enhancing film formation and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If heating is applied to maintain substrate temperature during film formation, then film thickness control is improved, but substrate temperature cannot be reduced quickly between processing steps
Solution Approach 1:
The temperature control system is segmented into two independent components: a heater for heating the substrate and a cooling gas injector for cooling the substrate. This segmentation allows each component to perform its function independently without interfering with the other, enabling rapid temperature transitions between processing steps while maintaining precise temperature control during film formation.
Solution Approach 2:
A cooling gas is introduced as an intermediary substance to transfer heat away from the substrate. The cooling gas acts as a mediator between the substrate and the cooling system, enabling rapid heat removal without direct thermal contact. This intermediary approach allows quick temperature reduction between processing steps while preserving the heating capability for precise temperature maintenance during film formation.
2Productivity
If substrate temperature is maintained at optimal level during ALD cycles, then reaction rate is improved, but temperature control precision deteriorates without active cooling
Solution Approach 1:
The temperature control system operates periodically by alternating between heating during film formation steps and cooling between steps. This periodic action maintains optimal substrate temperature during ALD cycles to ensure high reaction rates, while simultaneously providing active cooling between steps to achieve precise temperature control. The rhythmic switching between heating and cooling modes resolves the contradiction between maintaining high reaction rates and achieving precise temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved temperature control of substrates, accelerating reaction rates and maintaining consistent film thickness, thereby enhancing the throughput and quality of SiN film formation and etching processes.
Implementation Method 1
a heater that heats the processing container
Implementation Method 2
a cooling gas injector that injects a cooling gas for cooling the substrate
Implementation Method 3
plasma generation mechanism
Data Source
AI summary
A substrate processing apparatus includes: a processing container that accommodates a substrate; a processing gas supply that supplies a processing gas into the processing container; an exhaust that exhausts an inside of the processing container; a heater that heats the processing container; and a cooling gas injector that injects a cooling gas for cooling the substrate.