Substrate Processing Cover Unit for Wafer Temperature Uniformity
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving uniform temperature distribution across the surface of wafers during etching, leading to non-uniformity in processing reactions due to temperature differences caused by gas flow and rotation, which can result in inefficiencies and inconsistencies in semiconductor wafer processing.
Innovation Solution
A substrate processing apparatus with a cover unit that includes a heater and multiple gas supply openings, where the gas supply amount is adjusted based on the rotation speed of the substrate, and the gas is heated to ensure uniform temperature distribution by controlling the flow of heated nitrogen gas across the wafer surface, reducing temperature differences and enhancing processing uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If gas is supplied to heat the substrate, then temperature uniformity is improved, but gas flow non-uniformity causes temperature non-uniformity
Solution Approach 1:
The patent applies local quality by providing different gas supply conditions to different regions of the substrate. Multiple gas supply openings are arranged at different positions (central and peripheral regions) with different supply amounts, creating locally optimized heating conditions. The central region receives more gas flow than the peripheral region, compensating for the natural cooling effect at the edges and achieving overall temperature uniformity.
Solution Approach 2:
The patent changes the gas supply parameters (flow rate, distribution pattern) to achieve temperature uniformity. By adjusting the gas supply amount at different positions and controlling the gas flow rate based on substrate rotation speed, the system dynamically optimizes heating conditions to maintain consistent temperature across the substrate surface during processing.
2Productivity
If substrate rotation speed is increased to improve throughput, then productivity is improved, but temperature distribution non-uniformity increases
Solution Approach 1:
The patent applies dynamics by making the gas supply system adaptive to the substrate rotation speed. The gas supply amount is dynamically adjusted based on the rotation speed parameter, allowing the system to maintain temperature uniformity across varying throughput conditions. This dynamic control enables the system to optimize both productivity and processing quality simultaneously.
Solution Approach 2:
The system uses feedback control where the rotation speed is detected and used to adjust gas supply parameters accordingly. This feedback mechanism ensures that temperature distribution remains uniform even as rotation speed changes, maintaining consistent processing quality across different production rates.
3Temperature
If gas supply amount is increased to enhance heating, then temperature stability is improved, but gas flow non-uniformity worsens
Solution Approach 1:
The patent applies local quality by providing different gas supply conditions to different regions of the substrate. Multiple gas supply openings are arranged at different positions (central and peripheral regions) with different supply amounts, creating locally optimized heating conditions. The central region receives more gas flow than the peripheral region, compensating for the natural cooling effect at the edges and achieving overall temperature uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively stabilizes the temperature of the wafer surface, reducing non-uniformity in etching processes and improving processing efficiency even at higher wafer throughput, by ensuring consistent heating and gas flow patterns.
Implementation Method 1
The cover unit includes a heater configured to heat the substrate
Implementation Method 2
The gas is heated by the heater. A supply amount of at least some of the gas is adjusted based on a rotation speed of the substrate
Data Source
AI summary
A substrate processing apparatus includes a substrate holder, a processing liquid supply and a cover unit. The substrate holder holds a substrate horizontally and rotate the substrate. The processing liquid supply supplies a processing liquid toward a first surface of the substrate held by the substrate holder. The cover unit faces a second surface of the substrate, the second surface being opposite to the first surface. The cover unit includes a heater configured to heat the substrate. The cover unit is provided with an opening at a position corresponding to a central portion of the substrate and multiple gas supply openings, at an outer peripheral side than the opening, through which a gas is supplied toward the second surface of the substrate. The gas is heated by the heater. A supply amount of at least some of the gas is adjusted based on a rotation speed of the substrate.