Semiconductor Substrate Crack-Guided Dicing After Metal Film Deposition
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Solution Overview
Problem
The existing manufacturing methods for semiconductor devices with metal films on their surfaces are costly due to the need for precise control of groove depths during plasma etching and high manufacturing costs.
Innovation Solution
A method involving forming a crack in the semiconductor substrate along the boundary between element regions using a pressing member, followed by forming a metal film and then dividing both the substrate and the metal film along this crack using a dividing member from the opposite surface, allowing for simpler and cost-effective division.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dividing grooves are formed by plasma etching to leave remaining portions, then the metal film can be divided, but the manufacturing cost increases and the process complexity increases
Solution Approach 1:
The patent replaces the plasma etching process with a mechanical pressing method. A pressing member is pressed against the semiconductor substrate to form a crack along the dividing line, and then a dividing member is pressed to propagate the crack through the metal film. This mechanical approach eliminates the need for expensive plasma etching equipment and complex depth control systems while achieving precise division.
Solution Approach 2:
The patent performs preliminary action by forming the crack in the semiconductor substrate before forming the metal film. The crack is created by pressing the pressing member against the substrate along the intended dividing line. Subsequently, when the metal film is formed and the dividing member is pressed, the pre-formed crack guides the division process, ensuring accurate separation without requiring complex etching procedures.
2Reliability
If dividing grooves are formed by plasma etching with remaining portions, then the metal film can be divided, but the process complexity increases
Solution Approach 1:
The patent replaces the complex plasma etching process with a simple mechanical pressing operation. Instead of using plasma chemistry and precise depth control, the invention uses a pressing member to create a surface crack that guides subsequent division. This mechanical approach dramatically simplifies the process while maintaining high division accuracy.
Solution Approach 2:
The patent segments the division process into two simple mechanical steps: first forming a crack with a pressing member, then propagating it with a dividing member. This segmentation avoids the need for complex single-step etching processes and allows each step to be performed with simple, well-controlled mechanical actions.
3Reliability
If the crack is formed after the metal film is formed, then the metal film can be divided, but the crack may not extend properly through the substrate
Solution Approach 1:
The patent performs the critical action of crack formation in the semiconductor substrate before depositing the metal film. The pressing member creates a surface crack along the dividing line on the substrate. When the metal film is subsequently formed and the dividing member is pressed, the pre-existing crack in the substrate serves as a guide, ensuring the crack propagates precisely through both the substrate and the metal film without deviation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient and cost-effective division of semiconductor substrates and metal films in a single step, reducing manufacturing costs and improving process accuracy.
Implementation Method 1
forming a crack extending in a thickness direction of the semiconductor substrate along a boundary between a plurality of element regions by pressing a pressing member against a first surface of the semiconductor substrate along the boundary
Implementation Method 2
dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member against the semiconductor substrate along the boundary from a direction facing a second surface of the semiconductor substrate
Data Source
Figure 1~2
Figure 3~5
Figure 6A~6B
AI summary
A manufacturing method of a semiconductor device includes preparing a semiconductor substrate (2) having a plurality of element regions (3) and having a first surface (2a) and a second surface (2b) opposite to each other, forming a crack (5) extending in a thickness direction of the semiconductor substrate along a boundary between the plurality of element regions by pressing a pressing member (32) against the first surface of the semiconductor substrate (2) along the boundary, forming a metal film (8) over the plurality of element regions on the first surface of the semiconductor substrate after the forming of the crack, and dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member (33) against the semiconductor substrate along the boundary from a direction facing the second surface of the semiconductor substrate after the forming of the metal film.