Semiconductor Substrate Dehydration Chemical for Fin Collapse Prevention
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Solution Overview
Problem
Conventional dehydration methods for semiconductor substrates, such as spinning and IPA vapor dryers, can cause fin collapse due to surface tension and pose safety risks, while existing methods are costly and inefficient in removing residual moisture from high aspect ratio fin structures.
Innovation Solution
A dehydrating chemical comprising a first chemical with a melting point below ambient temperature and a second chemical with a melting point above ambient temperature is applied to the substrate, solidified, and then vaporized to remove residual moisture without inducing fin collapse, using a controlled apparatus to manage temperature and pressure conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional dehydration methods (spinning, IPA vapor dryer) are used, then residual moisture is removed, but fin collapse occurs due to surface tension
Solution Approach 1:
The patent changes the physical parameters of the dehydration process by using a dehydrating chemical with specific melting point characteristics (below ambient temperature) instead of conventional methods. This parameter change allows the chemical to remain liquid at low temperatures, enabling effective moisture removal without generating the high surface tension that causes fin collapse in conventional spinning or vapor dryer methods
Solution Approach 2:
The patent utilizes phase transitions of the dehydrating chemical - specifically its melting point being below ambient temperature - to achieve effective dehydration. The chemical transitions between liquid and solid phases at controlled temperatures, allowing it to penetrate and remove moisture from fin structures without causing collapse, then vaporizes to complete the dehydration process
2Quantity of substance
If conventional dehydration methods are used, then moisture is removed, but safety risks and operational costs increase
Solution Approach 1:
The patent employs a dehydrating chemical that can be applied, used, and then removed or replaced - effectively a disposable approach to dehydration. This eliminates the need for expensive, complex equipment like IPA vapor dryers or high-speed spinners, reducing both operational costs and safety risks associated with these conventional methods
3Productivity
If high aspect ratio fin structures are used to achieve required cell capacitance, then device performance is improved, but susceptibility to fin collapse increases
Solution Approach 1:
The patent changes the temperature parameter during dehydration by using a chemical with melting point below ambient temperature. This allows the dehydration to proceed at low temperatures that do not thermally stress the high aspect ratio fins, removing moisture effectively while maintaining fin structural stability and preventing collapse
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively alleviates fin collapse and efficiently removes residual moisture from semiconductor substrates, reducing defects and operational costs while ensuring safety, allowing for the use of semiconductor structures in various fabrication processes.
Implementation Method 1
solidified, and then vaporized to remove residual moisture
Implementation Method 2
solidified, and then vaporized to remove residual moisture
Data Source
AI summary
The present disclosure provides a dehydrating chemical for dehydrating a semiconductor substrate under an ambient temperature, including a first chemical having a melting point below the ambient temperature, and a second chemical having a melting point greater than the melting point of the first chemical, wherein the dehydrating chemical has a melting point less than the ambient temperature by predetermined ΔT0 degrees, and at least one of the first chemical and the second chemical has a saturated vapor pressure greater than a predetermined pressure Psv under 1 atm.