Substrate Film Deposition Sequence for Halogen By-Product Removal
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Solution Overview
Problem
The deposition rate in the process of forming a film on a substrate during semiconductor device manufacturing is often hindered by the accumulation of halogen-based by-products, which inhibit the reaction between precursor gases and the substrate surface.
Innovation Solution
A method involving the consecutive supply of specific gas sequences, including a halogen-containing gas, a reducing gas, and inert gases, to form a film containing a first and second element, where the halogen-containing gas and a fourth reducing gas are supplied consecutively, and the second and third reducing gases are supplied consecutively, to reduce by-product accumulation and enhance deposition efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional film formation process is used, then film can be formed on substrate, but deposition rate decreases due to halogen by-product accumulation
Solution Approach 1:
A reducing gas is supplied before the precursor gas to pre-react with and remove halogen by-products from the substrate surface. This preliminary action prevents by-product accumulation that would otherwise inhibit subsequent deposition reactions, thereby maintaining high deposition rates throughout the film formation process.
Solution Approach 2:
The halogen by-products, which are harmful to deposition rate, are converted into beneficial reactions by introducing a reducing gas. The reducing gas reacts with the halogen by-products to form volatile compounds that can be easily removed, transforming the harmful accumulation into a useful cleaning mechanism that enhances overall deposition efficiency.
2Productivity
If multiple gases are supplied in sequence, then deposition rate improves, but process complexity increases
Solution Approach 1:
The film formation process is segmented into distinct stages: a first gas supply stage with reducing gas before precursor gas to remove by-products, and a second gas supply stage with precursor gas for actual film deposition. This segmentation allows each stage to be optimized independently while maintaining overall process simplicity through clear temporal separation of functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the deposition rate by reducing the time for by-product reaction and adsorption on the substrate surface, leading to better film quality and electrical resistance characteristics.
Implementation Method 1
supplying a first gas containing a first element and a halogen element to the substrate
Implementation Method 2
supplying a third gas containing a third element and having a reducing character to the substrate; supplying a fourth gas containing a fourth element and having a reducing character to the substrate
Data Source
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AI summary
A technique includes forming a film containing a first element and a second element different from the first element on a substrate (200) by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate (200); (b) supplying a second gas containing the second element to the substrate (200); (c) supplying a third gas containing a third element and having a reducing character to the substrate (200); and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate (200), wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.